TEMT6000X01 Vishay, TEMT6000X01 Datasheet - Page 2

AMBIENT LIGHT SENSOR 1206 SMD

TEMT6000X01

Manufacturer Part Number
TEMT6000X01
Description
AMBIENT LIGHT SENSOR 1206 SMD
Manufacturer
Vishay
Type
Ambient Light Photo Sensor with Phototransistor Outputr
Datasheets

Specifications of TEMT6000X01

Wavelength
570nm
Output Type
Current
Package / Case
4.00mm L x 2.00mm W x 1.05mm H
Maximum Power Dissipation
100 mW
Maximum Dark Current
50 nA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Product
Ambient Light Sensor
Transistor Polarity
NPN
Wavelength Typ
570nm
Power Consumption
100mW
Viewing Angle
60°
No. Of Pins
3
Msl
MSL 4 - 72 Hours
Power Dissipation Pd
100mW
Light Current
10µA
Transistor Case Style
1206
Half Angle
60°
Operating Temperature Range
-40°C To +100°C
Rohs Compliant
Yes
Base Number
6000
Dark Current
3nA
Svhc
No SVHC (20-Jun-2011)
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Lens Type
Transparent
Emitter-collector Voltage (max)
1.5V
Collector-emitter Voltage
6V
Collector Current (dc) (max)
20mA
Collector-emitter Sat Volt (max)
100(Typ)V
Dark Current (max)
50nA
Power Dissipation
100mW
Peak Wavelength
570nm
Half-intensity Angle
120deg
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
3
Package Type
SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1055-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TEMT6000X01
Manufacturer:
Vishay Semiconductors
Quantity:
135
Part Number:
TEMT6000X01
Manufacturer:
COTO
Quantity:
10 000
Part Number:
TEMT6000X01
Manufacturer:
VISHAY
Quantity:
120
Part Number:
TEMT6000X01
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
TEMT6000X01
0
Company:
Part Number:
TEMT6000X01
Quantity:
70 000
TEMT6000
Vishay Semiconductors
Basic Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Collector emitter breakdown
voltage
Collector dark current
Collector-emitter capacitance
Collector light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation
voltage
amb
amb
Figure 2. Relative Photo Current vs. Ambient Temperature
Figure 1. Collector Dark Current vs. Ambient Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
19758
19759
10
10
10
10
10
10
10
10
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-6
-8
-9
-12
-7
-10
-11
-13
- 40
- 40
- 20
T
V
T
amb
- 20
amb
CE
= 5 V
- Ambient Temperature (°C)
- Ambient Temperature (°C)
0
0
20
I
V
V
E
V
E
V
E
I
20
C
PCE
CE
CE
v
CE
v
CE
v
V
= 0.1 mA
= 20 lx, CIE illuminant A,
= 100 lx, CIE illuminant A,
= 20 lx, standard light A,
CE
40
= 5 V, E = 0
= 0 V, f = 1 MHz, E = 0
= 5 V
= 5 V
= 1.2 µA
= 5 V, T = 2856 K
40
Test condition
60
60
80
80
100
100
Symbol
V
C
V
I
I
I
λ
CEO
CEsat
PCE
PCE
Figure 4. Collector Emitter Capacitance vs. Collector Emitter
CEO
CEO
λ
ϕ
0.1
p
19760
19762
1000
100
Figure 3. Photo Current vs. Illuminance
10
25
20
15
10
1
5
0
Min
10
0.1
3.5
6
V
CE
- Collector Emitter Voltage (V)
360 to 970
E
v
Voltage
± 60
Typ.
570
- Illuminance (Ix)
0.1
16
10
50
3
100
1.0
Document Number 81579
Max
50
16
f = 1 MHz
Rev. 1.3, 28-Nov-06
1000
10.0
Unit
deg
nm
nm
nA
µA
µA
pF
V
V

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