TEMD6200FX01 Vishay, TEMD6200FX01 Datasheet - Page 2

AMBIENT LIGHT SENSOR 0805 SMD

TEMD6200FX01

Manufacturer Part Number
TEMD6200FX01
Description
AMBIENT LIGHT SENSOR 0805 SMD
Manufacturer
Vishay
Type
Ambient Light Photo Sensor with Photodiode Outputr
Datasheet

Specifications of TEMD6200FX01

Wavelength
540nm
Output Type
Current
Package / Case
0805 (2012 Metric)
Maximum Power Dissipation
100 mW
Product
Ambient Light Sensor
Wavelength Typ
540nm
Half Angle
60°
Dark Current
100pA
Diode Case Style
0805
No. Of Pins
2
Operating Temperature Range
-40°C To +100°C
Msl
MSL 3 - 168 Hours
Reverse Voltage Vr
16V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1503-2
TEMD6200FX01
TEMD6200FX01GITR
TEMD6200FX01GITR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TEMD6200FX01
Manufacturer:
VISHAY/威世
Quantity:
20 000
TEMD6200FX01
Vishay Semiconductors
Note
T
BASIC CHARACTERISTICS
T
www.vishay.com
2
amb
amb
BASIC CHARACTERISTICS
PARAMETER
Breakdown voltage
Reverse dark current
Diode capacitance
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
Fall time
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Fig. 1 - Diode Capacitance vs. Reverse Voltage
18818
20093
Fig. 2 - Reverse Light Current vs. Illuminance
0.001
0.01
1000
0.01
0.1
10
100
0.1
10
1
1
10
0
T
amb
20
- Ambient Temperature (°C)
E
V
100
- Illuminance (lx)
40
For technical questions, contact:
CIE illuminant A
V
60
R
1000
= 5 V
U
U
R
R
E
V
V
V
= 5 V, R
= 5 V, R
e
R
R
R
80
= 5 V
= 1 mW/cm
= 0 V, f = 1 MHz, E = 0 lx
= 5 V, f = 1 MHz, E = 0 lx
I
TEST CONDITION
R
V
CIE illuminant A
R
= 100 µA, E = 0 lx
10000
= 10 V, E = 0 lx
E
100
L
L
V
V
= 50 Ω, TLMW3300
= 50 Ω, TLMW3300
Ambient Light Sensor
R
= 100 lx,
= 5 V
2
, λ = 550 nm,
detectortechsupport@vishay.com
SYMBOL
V
λ
C
C
(BR)
I
I
I
λ
ϕ
0.5
t
t
ro
ra
ra
r
Fig. 4 - Relative Spectral Sensitivity vs. Wavelength
D
D
p
f
Fig. 3 - Diode Capacitance vs. Reverse Voltage
20047
20094
1.0
0.8
0.6
0.4
0.2
0.0
70
60
50
40
30
20
10
0
400
0
MIN.
0.03
16
600
Wavelength (nm)
V
10
R
430 to 610
- Reverse Voltage (V)
TYP.
0.04
± 60
540
150
150
0.1
60
24
1
800
20
Photodiode
human eye
Document Number: 81812
E
f = 1 MHz
0
MAX.
= 0
1000
5
Rev. 1.2, 26-Mar-09
30
UNIT
deg
nm
nm
nA
pF
pF
µA
µA
ns
ns
V

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