TEPT4400 Vishay, TEPT4400 Datasheet - Page 2

• Manufacturer Part Number: TEPT4400
• Description: AMBIENT LIGHT SENSOR 3MM 570NM
• Manufacturer: Vishay
• Type: Chipr

Specifications of TEPT4400

• Wavelength: 570nm
• Output Type: Current
• Package / Case: Radial, 3mm Dia (T 1)
• Maximum Power Dissipation: 100 mW
• Maximum Dark Current: 50 nA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Product: Ambient Light Sensor
• Transistor Polarity: NPN
• Wavelength Typ: 570nm
• Power Consumption: 100mW
• Viewing Angle: 30°
• No. Of Pins: 2
• Power Dissipation Pd: 100mW
• Light Current: 40µA
• Spectral Response Peak Wavelength: 570nm
• Transistor Case Style: T-1
• Base Number: 4400
• Dark Current: 3nA
• Half Angle: 20°
• Rohs Compliant: Yes
• Svhc: No SVHC (20-Jun-2011)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1057

TEPT4400
Vishay Semiconductors
Note
T
Note
Each 5000 piece bag will contain a single group. The label on the bag will indicate which binned group is in the bag. A specific group cannot
be ordered. Production shipments containing multiple bags will likely include multiple groups. Please design accordingly.
www.vishay.com
502
amb
BASIC CHARACTERISTICS
PARAMETER
Collector emitter breakdown voltage
Collector dark current
Collector emitter capacitance
Collector light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
TYPE DEDICATED CHARACTERISTICS
PARAMETER
Photo current
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
21337
120
100
80
60
40
20
0
0
10
R
thJA
T
amb
20 30 40
= 300 K/W
- Ambient Temperature (°C)
50 60 70 80
For technical questions, contact:
V
CE
E
TEST CONDITION
E
E
V
v
CIE illuminant A,
Ambient Light Sensor, RoHS Compliant
v
v
CE
= 5 V, T
= 100 lx, CIE illuminant A,
= 20 lx, CIE illuminant A,
= 20 lx, CIE illuminant A,
E
TEST CONDITION
= 0 V, f = 1 MHz, E = 0
V
V
90 100
= 20 lx,
CE
I
PCE
I
C
V
V
amb
= 5 V, E = 0
= 0.1 mA
CE
CE
= 1.2 μA
= 5 V
= 5 V
= 25 °C
BINNED GROUP
[e-mail]
B
C
A
SYMBOL
V
C
V
I
I
I
λ
CEsat
CEO
PCE
PCE
CEO
λ
CEO
ϕ
0.5
p
SYMBOL
MIN.
I
I
I
15
PCE
PCE
PCE
6
440 to 800
TYP.
MIN.
± 30
23.5
36.9
200
570
0.1
15
16
3
Document Number: 81341
MAX.
MAX.
28.4
44.6
70
50
70
Rev. 1.4, 18-Jun-10
UNIT
UNIT
deg
nm
nm
μA
μA
μA
nA
pF
μA
μA
V
V