MX8683RTR IXYS, MX8683RTR Datasheet - Page 190

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MX8683RTR

Manufacturer Part Number
MX8683RTR
Description
IC FLUX SENSOR 10BIT DGTL 8-DFN
Manufacturer
IXYS
Type
Special Purposer
Datasheets

Specifications of MX8683RTR

Voltage - Supply
4.5 V ~ 5.5 V
Current - Supply
3mA
Output Type
Digital, 10-Bit Serial
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VFDFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Sensing Range
-
Current - Output (max)
-
Features
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Direct Copper Bonded Ceramic Substrates
DCB Ceramic Substrates (Al
IXYS manufactures Direct Copper Bonded substrates on aluminum oxide (Al
substrates form the basis for new product ideas and electronic developments with a high degree of integration.
Standard bonded DCB panel dimensions are:
DCB parts are available as: • bonded plate
ALN - DCB on request
*
168
Unclad aluminum oxide ceramic
Conduction layers - both sides
DCB ceramic substrate
Al
dimensions
usable area
thickness
arc through voltage
thermal conductivity
copper thickness
conductor width
conductor spacing
spacing conductor/edge of ceramic
surface finishes available
peel-off resistance (DIN 532282)
application temperature range
resistant to hydrogen
thermal expansion coefficient
dimensions according
to customer specific drawing
= (for 0.25 mm thk.)
2
O
3
content
2
O
• bonded and patterned plate
• prelasered, unbroken plate
• individuale substrates
3
or AlN)
Patterned DCB substrates can be manufactured to customers‘ drawings.
DCB ceramic substrates fulfill several functions:
- carriers for the semiconductor chips and connection clips
- circuits similar to that on a PC board
- electrical isolator for separating the „current paths“ from the „heat paths“
- transfer medium for the heat dissipation from the active parts into the heat sink.
max. up to
typical
max.
min.
min.
min.
min.
128 x 210, 138 x 190.5, 115 x 165*
130 x 180, 130 x 200, 107 x 156*
bare copper; nickel plated;
0.3 (< 0.3 on request)
1.00, 0.63, 0.38, 0.25
nickel + gold plated
2
O
3
) or aluminum nitride (AlN) base. DCB ceramic
0.35 + / - 0.2
0.3 + / - 0.2
0.4 + / - 0.2
-55...+850
7.4 x 10-6
> 96
> 24
400
10
9
W/m · K
N/mm
mm
mm
mm
mm
mm
mm
mm
K-1
kV
°C
°C
%

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