S29AL016D70TFI020 Spansion Inc., S29AL016D70TFI020 Datasheet - Page 22

• Manufacturer Part Number: S29AL016D70TFI020
• Description: Flash Memory IC
• Manufacturer: Spansion Inc.

Specifications of S29AL016D70TFI020

• Memory Size: 16Mbit
• Memory Configuration: 2M X 8 / 1M X 16
• Ic Interface Type: Parallel
• Access Time: 70ns
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C To +85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Command Definitions
Reading Array Data
Reset Command
22
Writing specific address and data commands or sequences into the command
register initiates device operations.
sequences. Writing incorrect address and data values or writing them in the
improper sequence resets the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens
later. All data is latched on the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the
The device is automatically set to reading array data after device power-up. No
commands are required to retrieve data. The device is also ready to read array
data after completing an Embedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the Erase
Suspend mode. The system can read array data using the standard read timings,
except that if it reads at an address within erase-suspended sectors, the device
outputs status data. After completing a programming operation in the Erase Sus-
pend mode, the system may once again read array data with the same exception.
See
The system must issue the reset command to re-enable the device for reading
array data if DQ5 goes high, or while in the autoselect mode. See the
mand
See also
tion for more information. The
parameters, and
Writing the reset command to the device resets the device to reading array data.
Address bits are don’t care for this command.
The reset command may be written between the sequence cycles in an erase
command sequence before erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the sequence cycles in a program
command sequence before programming begins. This resets the device to read-
ing array data (also applies to programming in Erase Suspend mode). Once
programming begins, however, the device ignores reset commands until the op-
eration is complete.
The reset command may be written between the sequence cycles in an autoselect
command sequence. Once in the autoselect mode, the reset command must be
written to return to reading array data (also applies to autoselect during Erase
Suspend).
If DQ5 goes high during a program or erase operation, writing the reset command
returns the device to reading array data (also applies during Erase Suspend).
Erase Suspend/Erase Resume Commands
section, next.
Requirements for Reading Array Data
Figure 13
shows the timing diagram.
Read Operations
S29AL016D
Table 9
P r e l i m i n a r y
defines the valid register command
for more information on this mode.
in the
Device Bus Operations
AC Characteristics
table provides the read
Reset Com-
S29AL016D_00_A2 December 17, 2004
section.
sec-