NAND01GW3B2BN6E NUMONYX, NAND01GW3B2BN6E Datasheet - Page 49
NAND01GW3B2BN6E
Manufacturer Part Number
NAND01GW3B2BN6E
Description
IC, FLASH, 1GB, 25µS, TSOP-48
Manufacturer
NUMONYX
Specifications of NAND01GW3B2BN6E
Memory Type
Flash
Memory Size
1GB
Access Time
25µs
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Voltage, Vcc
3.3V
Rohs Compliant
Yes
Interface
Serial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND01GW3B2BN6E
Manufacturer:
ST
Quantity:
20 000
NAND01G-B2B, NAND02G-B2C
Figure 25. Page read operation AC waveforms
1. A fifth address cycle is required for 2-Gbit devices only.
RB
I/O
CL
AL
W
E
R
Command
Code
00h
cycle 1
Add.N
tWLWL
Address N Input
cycle 2
Add.N
cycle 3
Add.N
cycle 4
Add.N
tWHBH
cycle 5
Add.N
tWHBL
tBLBH1
30h
Busy
from Address N to Last Byte or Word in Page
tRLRH
Data
tALLRL2
N
Data
N+1
(Read Cycle time)
Data Output
tRLRL
Data
N+2
DC and AC parameters
tEHQZ
tRHQZ
Data
Last
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