MCP73827-4.1VUA Microchip Technology, MCP73827-4.1VUA Datasheet - Page 12

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MCP73827-4.1VUA

Manufacturer Part Number
MCP73827-4.1VUA
Description
IC,Battery Management,TSSOP,8PIN,PLASTIC
Manufacturer
Microchip Technology
Datasheets

Specifications of MCP73827-4.1VUA

Function
Charge Management
Battery Type
Lithium-Ion (Li-Ion)
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-20°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Voltage
4.141 V
Operating Supply Voltage
4.5 V to 5.5 V
Supply Current
560 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 20 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
MCP738274.1VUA

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
MCP73827-4.1VUA
Manufacturer:
Microchip Technology
Quantity:
135
Part Number:
MCP73827-4.1VUATR
Manufacturer:
Microchip Technology
Quantity:
2 150
MCP73827
6.1
Due to the low efficiency of linear charging, the most
important factors are thermal design and cost, which
are a direct function of the input voltage, output current
and thermal impedance between the external P-chan-
nel pass transistor, Q1, and the ambient cooling air.
The worst-case situation is when the output is shorted.
In this situation, the P-channel pass transistor has to
dissipate the maximum power. A trade-off must be
made between the charge current, cost and thermal
requirements of the charger.
6.1.1
Selection of the external components in Figure 6-1 is
crucial to the integrity and reliability of the charging sys-
tem. The following discussion is intended as a guide for
the component selection process.
6.1.1.1
The preferred fast charge current for Lithium-Ion cells
is at the 1C rate with an absolute maximum current at
the 2C rate. For example, a 500 mAH battery pack has
a preferred fast charge current of 500 mA. Charging at
this rate provides the shortest charge cycle times with-
out degradation to the battery pack performance or life.
The current sense resistor, R
Where:
For the 500 mAH battery pack example, a standard
value 100 mΩ, 1% resistor provides a typical peak fast
charge current of 530 mA and a maximum peak fast
charge current of 758 mA. Worst case power dissipa-
tion in the sense resistor is:
A Panasonic ERJ-L1WKF100U 100 mΩ, 1%, 1 W
resistor is more than sufficient for this application.
A larger value sense resistor will decrease the peak
fast charge current and power dissipation in both the
sense resistor and external pass transistor, but will
increase charge cycle times. Design trade-offs must be
considered to minimize space while maintaining the
desired performance.
DS21704B-page 12
PowerDissipation
V
I
OUT
CS
Application Circuit Design
COMPONENT SELECTION
is the current limit threshold voltage
is the desired fast charge current
SENSE RESISTOR
R
SENSE
=
100mΩ
=
SENSE
----------- -
I
V
OUT
×
CS
758mA
, is calculated by:
2
=
57.5mW
6.1.1.2
The external P-channel MOSFET is determined by the
gate to source threshold voltage, input voltage, output
voltage, and peak fast charge current. The selected P-
channel MOSFET must satisfy the thermal and electri-
cal design requirements.
The worst case power dissipation in the external pass
transistor occurs when the input voltage is at the maxi-
mum and the output is shorted. In this case, the power
dissipation is:
Where:
Power dissipation with a 5V, +/-10% input voltage
source, 100 mΩ, 1% sense resistor, and a scale factor
of 0.43 is:
Utilizing a Fairchild NDS8434 or an International Recti-
fier IRF7404 mounted on a 1in
junction temperature rise is 90°C, approximately. This
would allow for a maximum operating ambient temper-
ature of 60°C.
By increasing the size of the copper pad, a higher ambi-
ent temperature can be realized or a lower value sense
resistor could be utilized.
Alternatively, different package options can be utilized
for more or less power dissipation. Again, design trade-
offs should be considered to minimize size while main-
taining the desired performance.
The gate to source threshold voltage and R
external P-channel MOSFET must be considered in the
design phase.
The worst case, V
when the input voltage is at the minimum and the
charge current is at the maximum. The worst case, V
is:
Where:
PowerDissipation
Thermal Considerations
Electrical Considerations
V
I
K is the foldback current scale factor.
V
output
V
OUT
INMAX
DRVMAX
GS
PowerDissipation
is the maximum peak fast charge current
=
EXTERNAL PASS TRANSISTOR
V
is the maximum input voltage
DRVMAX
is the maximum sink voltage at the V
GS
=
provided by the controller occurs
(
© 2007 Microchip Technology Inc.
5.5V 758mA
V
INMIN
=
V
×
2
INMAX
pad of 2 oz. copper, the
I
OUT
×
×
I
×
OUT
0.43
R
SENSE
DSON
×
=
K
1.8W
)
of the
DRV
GS

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