MCP6G01-E/SN Microchip Technology, MCP6G01-E/SN Datasheet - Page 12

• Manufacturer Part Number: MCP6G01-E/SN
• Description: IC,Voltage Controlled Gain Amplifier,SINGLE,SOP,8PIN,PLASTIC
• Manufacturer: Microchip Technology

Specifications of MCP6G01-E/SN

• Amplifier Type: General Purpose
• Number Of Circuits: 1
• Output Type: Rail-to-Rail
• Slew Rate: 4.5 V/µs
• -3db Bandwidth: 900kHz
• Current - Input Bias: 1pA
• Voltage - Input Offset: 1000µV
• Current - Supply: 110µA
• Current - Output / Channel: 20mA
• Voltage - Supply, Single/dual (±): 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain Bandwidth Product: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

MCP6G01/1R/1U/2/3/4
Note: Unless otherwise indicated, T
R
FIGURE 2-19:
Ideal Output Voltage, with V
FIGURE 2-20:
vs. Output plus Ladder Current (circuit in
Figure
FIGURE 2-21:
Frequency.
DS22004B-page 12
L
= 100 kΩ to V
1.E+05
1.E+04
1.E+03
1.E+02
100k
1000
4-4).
10k
100
-1
-2
-3
100
3
2
1
0
1k
1.E+04
10
0.0
10k
1
0.01
V
Representative Part
G = 50
DD
0.2
= 10
= 1
= +1.8V
V
DD
Output Current Magnitude (mA)
DD
Ideal Output Voltage; GV
0.4
/2, C
– V
V
1.E+05
DD
100k
Output Voltage Error vs.
Output Voltage Headroom
Output Impedance vs.
OH
0.6
0.1
= +1.8V
Frequency (Hz)
L
= 60 pF, GSEL = V
0.8
DD
1.0
G = +1
G = +10
G = +50
1.E+06
= 1.8V.
V
1M
1.2
OL
1
– V
V
IN
DD
A
1.4
(V)
SS
= +25°C, V
= +5.5V
1.6
DD
1.E+07
10M
/2, and CS is tied low.
10
1.8
DD
= +1.8V to +5.5V, V
FIGURE 2-22:
Ideal Output Voltage, with V
FIGURE 2-23:
vs. Temperature.
FIGURE 2-24:
14%
12%
10%
8%
6%
4%
2%
0%
-1
-2
-3
3
2
1
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
-50
V
Representative Part
DD
V
V
SS
DD
= +5.5V
DD
= 1.8V: V
-25
= GND, G = +1 V/V, V
Ladder Resistance Drift (ppm/°C)
= 5.5V: V
Ideal Output Voltage; GV
Ambient Temperature (°C)
V
Output Voltage Error vs.
Output Voltage Headroom
Ladder Resistance Drift.
0
V
DD
OL
© 2006 Microchip Technology Inc.
OL
DD
–V
–V
–V
–V
OH
25
SS
SS
OH
DD
G = +10
G = +50
50
= 5.5V.
1228 Samples
T
A
= -40 to +125°C
75
IN
(V)
IN
G = +1
100
= (0.3V)/G,
125