LM3046MX National Semiconductor, LM3046MX Datasheet

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LM3046MX

Manufacturer Part Number
LM3046MX
Description
TRANSISTOR,BJT,ARRAY,INDEPENDENT,15V V(BR)CEO,50MA I(C),SO
Manufacturer
National Semiconductor
Datasheet

Specifications of LM3046MX

Rohs Compliant
NO

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© 2004 National Semiconductor Corporation
LM3046
Transistor Array
General Description
The LM3046 consists of five general purpose silicon NPN
transistors on a common monolithic substrate. Two of the
transistors are internally connected to form a differentially-
connected pair. The transistors are well suited to a wide
variety of applications in low power system in the DC through
VHF range. They may be used as discrete transistors in
conventional circuits however, in addition, they provide the
very significant inherent integrated circuit advantages of
close electrical and thermal matching. The LM3046 is sup-
plied in a 14-lead molded small outline package.
Schematic and Connection
Diagram
DS007950
See NS Package Number M14A
Order Number LM3046M
Small Outline Package
Top View
Features
n Two matched pairs of transistors
n Five general purpose monolithic transistors
n Operation from DC to 120 MHz
n Wide operating current range
n Low noise figure: 3.2 dB typ at 1 kHz
Applications
n General use in all types of signal processing systems
n Custom designed differential amplifiers
n Temperature compensated amplifiers
operating anywhere in the frequency range from DC to
VHF
V
Input offset current 2 µA max at I
BE
matched
±
5 mV
00795001
C
= 1 mA
www.national.com
July 1999

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LM3046MX Summary of contents

Page 1

... The LM3046 is sup- plied in a 14-lead molded small outline package. Schematic and Connection Diagram © 2004 National Semiconductor Corporation Features n Two matched pairs of transistors V matched BE Input offset current 2 µ ...

Page 2

... Absolute Maximum Ratings If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Power Dissipation 25˚ 25˚C to 55˚C A > T 55˚ 25˚C to 75˚C A > T 75˚C A Collector to Emitter Voltage, V Collector to Base Voltage, V Collector to Substrate Voltage, V Emitter to Base Voltage, V ...

Page 3

Electrical Characteristics (T = 25˚C unless otherwise specified) A Parameter Temperature Coefficient of Base to Emitter Voltage Collector to Emitter Saturation Voltage (V Temperature Coefficient of Input Offset Voltage Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to ...

Page 4

Typical Performance Characteristics Typical Collector To Base Cutoff Current vs Ambient Temperature for Each Transistor Typical Static Forward Current-Transfer Ratio and Beta Ratio for Transistors Q and Q vs Emitter Current 2 Typical Static Base To Emitter Voltage Characteristic and ...

Page 5

Typical Performance Characteristics Typical Input Offset Voltage Characteristics for Differential Pair and Paired Isolated Transistors vs Ambient Temperature Typical Noise Figure vs Collector Current (Continued) Typical Noise Figure vs 00795014 Typical Noise Figure vs 00795016 5 Collector Current 00795015 Collector ...

Page 6

Typical Performance Characteristics Typical Normalized Forward Current Transfer Ratio, Short Circuit Input Impedance, Open Circuit Output Impedance, and Open Circuit Reverse Voltage Transfer Ratio vs Collector Current Typical Input Admittance vs Frequency Typical Reverse Transfer Admittance vs Frequency www.national.com (Continued) ...

Page 7

... BANNED SUBSTANCE COMPLIANCE National Semiconductor certifies that the products and packing materials meet the provisions of the Customer Products Stewardship Specification (CSP-9-111C2) and the Banned Substances and Materials of Interest Specification (CSP-9-111S2) and contain no ‘‘Banned Substances’’ as defined in CSP-9-111S2. ...

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