DSPIC30F2023T-30I/PT Microchip Technology, DSPIC30F2023T-30I/PT Datasheet - Page 31
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DSPIC30F2023T-30I/PT
Manufacturer Part Number
DSPIC30F2023T-30I/PT
Description
12KB, Flash, 512bytes-RAM, 30MIPS, 35I/O, 16-bit Family,nanoWatt 44 TQFP 10x10x1
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr
Datasheets
1.AC164335.pdf
(286 pages)
2.DM300023.pdf
(22 pages)
3.DM300023.pdf
(18 pages)
4.DSPIC30F2011-20ISO.pdf
(66 pages)
5.DSPIC30F2011-20IP.pdf
(26 pages)
6.DSPIC30F1010-30ISO.pdf
(26 pages)
7.DSPIC30F1010-30ISO.pdf
(50 pages)
Specifications of DSPIC30F2023T-30I/PT
Core Processor
dsPIC
Core Size
16-Bit
Speed
30 MIPs
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
35
Program Memory Size
12KB (4K x 24)
Program Memory Type
FLASH
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TQFP, 44-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
DSPIC30F2023T-30I/PTTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DSPIC30F2023T-30I/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
Part Number:
DSPIC30F2023T-30I/PT
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
11.6
Instead of using a Bulk Erase operation, each region of
memory can be individually erased by row. In this case,
all of the code memory, executive memory and
Configuration registers must be erased one row at a
time. The procedure for erasing individual rows of
program memory is quite different from the procedure
for erasing the entire chip. This procedure is detailed in
TABLE 11-5:
© 2010 Microchip Technology Inc.
Step 1: Exit the Reset vector.
0000
0000
0000
Step 2: Initialize NVMADR and NVMADRU to erase code memory and initialize W7 for row address updates.
0000
0000
0000
0000
Step 3: Set NVMCON to erase 1 row of code memory.
0000
0000
Step 4: Unlock the NVMCON to erase 1 row of code memory.
0000
0000
0000
0000
Step 5: Initiate the erase cycle.
0000
0000
0000
0000
0000
—
0000
0000
0000
0000
0000
Command
(Binary)
Row Erasing Program Memory
040100
040100
000000
EB0300
883B16
883B26
200407
24071A
883B0A
200558
883B38
200AA9
883B39
A8E761
000000
000000
000000
000000
—
A9E761
000000
000000
000000
000000
SERIAL INSTRUCTION EXECUTION FOR ROW ERASING PROGRAM MEMORY
(Hex)
Data
GOTO 0x100
GOTO 0x100
NOP
CLR
MOV
MOV
MOV
MOV
MOV
MOV
MOV
MOV
MOV
BSET NVMCON, #WR
NOP
NOP
NOP
NOP
Externally time 'P19a' msec
Requirements”)
BCLR NVMCON, #WR
NOP
NOP
NOP
NOP
W6
W6, NVMADR
W6, NVMADRU
#0x40, W7
#0x4071, W10
W10, NVMCON
#0x55, W8
W8, NVMKEY
#0xAA, W9
W9, NVMKEY
Table
Step 3 must be modified with the appropriate NVMCON
value as per
However, since this method is more time consuming
and does not clear the code-protect bits, it is not
recommended in most cases.
Note 1: Program memory must be erased before
(see
11-5. If a Segment Erase operation is required,
Description
Section 13.0 “AC/DC Characteristics and Timing
writing any data to program memory.
Table
11-2.
DS70284C-page 31