CH80566EE025DW S LGPN Intel, CH80566EE025DW S LGPN Datasheet - Page 69

• Manufacturer Part Number: CH80566EE025DW S LGPN
• Description: MPU, ATOM PROCESSOR, Z530P, U-FCBGA8
• Manufacturer: Intel
• Series: ATOM - Z5xxr

Specifications of CH80566EE025DW S LGPN

• Core Size: 32bit
• Program Memory Size: 512KB
• Cpu Speed: 533MHz
• Digital Ic Case Style: FCBGA
• No. Of Pins: 437
• Supply Voltage Range: 0.8V To 1.1V
• Operating Temperature Range: 0°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Specifications and Design Considerations
Datasheet
Table 18. Thermal Diode Interface
Table 19. Thermal Diode Parameters Using Transistor Model
NOTES:
When calculating a temperature based on the thermal diode measurements, a number
of parameters must be either measured or assumed. Most devices measure the diode
ideality and assume a series resistance and ideality trim value, although are capable
of also measuring the series resistance. Calculating the temperature is then
accomplished using the equation listed under Table 19. In most sensing devices, an
expected value for the diode ideality is designed-in to the temperature calculation
equation. If the designer of the temperature sensing device assumes a perfect diode,
the ideality value (also called n
perfect, the designers usually select an n
behavior of the diodes in the processor. If the processor diode ideality deviates from
that of the n
temperature offset can be calculated with the equation:
Symbol
T
Where T
ideality of the diode, and n
sensing device.
Beta
error(nf)
IFW
1.
2.
3.
4.
5.
nQ
R
IE
T
Signal Name
THERMDA
THERMDC
The series resistance, R
more accurate readings as needed.
Intel does not support or recommend operation of the thermal diode under reverse
bias.
Characterized across a temperature range of 50–100 °C.
Not 100% tested. Specified by design characterization.
The ideality factor, nQ, represents the deviation from ideal transistor model behavior
as exemplified by the equation for the collector current:
Where I
transistor base emitter junction (same nodes as VD), k = Boltzmann Constant, and
T = absolute temperature (Kelvin).
= Tmeasured * (1 – n
error(nf)
Forward Bias Current
Emitter Current
Transistor Ideality
Series Resistance
trim
, each calculated temperature will be offset by a fixed amount. This
I
S
C
is the offset in degrees C, T
= saturation current, q = electronic charge, V
= I
S
* (e
Parameter
Pin/Ball Number
qV
BE
T
trim
, provided in the Diode Model Table (Table 19) can be used for
actual
/n
trim
Q
kT
is the diode ideality assumed by the temperature
/n
) will be 1.000. Given that most diodes are not
–1)
U4
T5
trim
)
trim
value that more closely matches the
measured
0.997
Min.
0.25
2.79
5
5
is in Kelvin, n
1.001
Thermal diode cathode
Typ.
4.52
Thermal diode anode
—
—
—
Signal Description
BE
= voltage across the
1.015
Max.
0.65
6.24
200
200
actual
is the measured
Unit
µA
µA
Ω
2, 3, 4
Note
2, 3
2, 5
1
1
s
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