BD87A41FVM-TR Rohm Semiconductor, BD87A41FVM-TR Datasheet - Page 7

• Manufacturer Part Number: BD87A41FVM-TR
• Description: IC, VOLTAGE DETECTION, MSOP8
• Manufacturer: Rohm Semiconductor
• Series: -r
• Type: Watchdog Circuitr

Specifications of BD87A41FVM-TR

• Threshold Voltage: 4.1V
• No. Of Supervisors / Monitors: 1
• Supply Voltage Range: 1V To 10V
• Reset Type: Active-Low
• Supply Current: 5µA
• Digital Ic Case Style: MSOP
• No. Of Pins: 8
• Operating Temperature: RoHS Compliant
• Number Of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: Adjustable/Selectable
• Voltage - Threshold: 4.1V
• Mounting Type: Surface Mount
• Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

10.
11.
5.
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9. Applications or inspection processes with modes where the potentials of the VDD pin and other pins may be reversed from their normal states
Input pin
may cause damage to the IC’s internal circuitry or elements. Use an output pin capacitance of 1000µF or lower in case VDD is shorted with the
GND pin while the external capacitor is charged. It is recommended to insert a diode for preventing back current flow in series with VDD or
bypass diodes between Vcc and each pin.
Actions in strong electromagnetic field
Testing on application boards
Regarding input pin of the IC
Ground Wiring Pattern
When VDD falls below the operating marginal voltage, output will be open. When output is being pulled up to input, output will be equivalent
to VDD.
The CLK and INH pins comprise inverter gates and should not be left open. (These pins should be either pulled up or down.) Input to the CLK
pin is detected using a positive edge trigger and does not affect the CLK signal duty. Input the trigger to the CLK pin within the TWH time.
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction.
capacitors after each process or step. Always turn the IC's power supply off before connecting it to or removing it from a jig or fixture during
the inspection process. Ground the IC during assembly steps as an antistatic measure. Use similar precaution when transporting or storing
the IC.
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor. For
example, the relation between each potential is as follows:
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual interference among
circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is
lower than the GND (P substrate) voltage to an input pin, should not be used.
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns, placing a single ground
point at the ground potential of application so that the pattern wiring resistance and voltage variations caused by large currents do not cause
variations in the small signal ground voltage. Be careful not to change the GND wiring pattern of any external components, either.
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress. Always discharge
(Pin A)
N
P
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
P+
Resistor
N
P
GND
Parasitic element
Back current prevention diode
P+
N
(Pin B)
Parasitic element
or transistor
Fig. 18 Example of IC structure
N
P+
C
Transistor (NPN)
Fig.19
VDD
7/8
Pin
N
B
P substrate
E
P
GND
Bypass diode
P+
N
(Pin B)
(Pin A)
B
E
C
GND
Parasitic element
Parasitic element or
transistor