TC7660CPA TELCOM SEMICONDUCTOR, TC7660CPA Datasheet - Page 2

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TC7660CPA

Manufacturer Part Number
TC7660CPA
Description
IC, VOLT CONVERTER, 7660, DIP8
Manufacturer
TELCOM SEMICONDUCTOR
Datasheet

Specifications of TC7660CPA

Primary Input Voltage
5V
No. Of Outputs
1
Output Voltage
-10V
Output Current
20mA
Voltage Regulator Case Style
DIP
No. Of Pins
8
Operating Temperature Range
0°C To +70°C
Operating Temperature
RoHS Compliant

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TC7660
1.0
Absolute Maximum Ratings*
Supply Voltage .............................................................+10.5V
LV and OSC Inputs Voltage: (Note 1)
Current into LV ......................................... 20 µA for V
Output Short Duration (V
Package Power Dissipation: (T
Operating Temperature Range:
Storage Temperature Range.........................-65°C to +160°C
ESD protection on all pins (HBM) ................... .............. 3 kV
Maximum Junction Temperature ........... ....................... 150°C
ELECTRICAL SPECIFICATIONS
DS21465B-page 2
Electrical Characteristics: Unless otherwise noted, specifications measured over operating temperature range with V
C
Supply Current
Supply Voltage Range, High
Supply Voltage Range, Low
Output Source Resistance
Oscillator Frequency
Power Efficiency
Voltage Conversion Efficiency
Oscillator Impedance
Note 1: Destructive latch-up may occur if voltages greater than V
OSC
8-Pin CERDIP ....................................................800 mW
8-Pin PDIP .........................................................730 mW
8-Pin SOIC .........................................................470 mW
C Suffix.......................................................0°C to +70°C
I Suffix .....................................................-25°C to +85°C
E Suffix ....................................................-40°C to +85°C
M Suffix .................................................-55°C to +125°C
.............................................. -0.3V to V
.....................................(V
= 0, refer to test circuit in Figure 1-1.
ELECTRICAL
CHARACTERISTICS
Parameters
SUPPLY
A
+
– 5.5V) to (V
70°C)
V
5.5V)...............Continuous
R
OUTEFF
Z
P
Sym
f
V
V
OSC
OSC
OUT
EFF
I
+
+
+
H
L
SS
+
) for V
Min
for V
3.0
1.5
95
97
+
+
+
< 5.5V
> 5.5V
> 3.5V
99.9
Typ
104
150
160
100
1.0
80
70
10
98
Max
180
100
120
130
150
300
600
3.5
10
+
or less than GND are supplied to any input pin.
* Notice: Stresses above those listed under "Maximum Rat-
ings" may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
FIGURE 1-1:
10 µF
Units
kHz
C
M
µA
k
%
%
V
V
1
+
R
Min
Min
I
I
I
I
V
0°C
V
-55°C
Pin 7 open
R
R
V
V
OUT
OUT
OUT
OUT
L
+
+
L
L
+
+
1
2
3
4
=
= 2V, I
= 2V, I
= 5 k
=
= 2V
= 5V
=20 mA, T
=20 mA, T
=20 mA, T
=20 mA, T
TC7660
T
T
T
A
A
A
T
A
OUT
OUT
Max, R
Max, R
+70°C
TC7660 Test Circuit.
+125°C (M Device)
= 3 mA, LV to GND
= 3 mA, LV to GND
A
A
A
A
8
7
6
5
2002 Microchip Technology Inc.
= +25°C
Conditions
L
L
+70°C (C Device)
+85°C (E and I Device)
+125°C (M Device)
= 10 k , LV Open
= 10 k , LV to GND
C
+
OSC
I
C
10 µF
L
+
2
= 5V,
R
I
S
L
(+5V)
V
V
+
OUT

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