AS7C31024B-12TCN ALLIANCE MEMORY, AS7C31024B-12TCN Datasheet - Page 2

• Manufacturer Part Number: AS7C31024B-12TCN
• Description: SRAM, 1MB, 3V, 12NS, 128KX8, TSOP32
• Manufacturer: ALLIANCE MEMORY

Specifications of AS7C31024B-12TCN

• Memory Size: 1Mbit
• Access Time: 12ns
• Supply Voltage Range: 3V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 32
• Operating Temperature Range: 0°C To +70°C
• Operating Temperature Max: 70°C
• Operating: RoHS Compliant

Functional description
The AS7C31024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words
x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.
Equal address access and cycle times (t
high performance applications. Active high and low chip enables (CE1, CE2) permit easy memory expansion with multiple-bank systems.
When CE1 is high or CE2 is low, the device enters standby mode. If inputs are still toggling, the device will consume I
static, then full standby power is reached (I
standby conditions.
A write cycle is accomplished by asserting write enable (WE) and both chip enables (CE1, CE2). Data on the input pins I/O0 through I/O7 is
written on the rising edge of WE (write cycle 1) or the active-to-inactive edge of CE1 or CE2 (write cycle 2). To avoid bus contention,
external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and both chip enables (CE1, CE2), with write enable (WE) high. The chip
drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is
active, output drivers stay in high-impedance mode.
Absolute maximum ratings
Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and func-
tional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
Truth table
Key: X = don’t care, L = low, H = high
Voltage on V
Voltage on any pin relative to GND
Power dissipation
Storage temperature (plastic)
Ambient temperature with V
DC current into outputs (low)
3/24/04, v.1.2
CE1
H
X
L
L
L
CC
relative to GND
CE2
X
H
H
H
L
Parameter
CC
applied
WE
AA
X
X
H
H
L
, t
SB1
RC
, t
). For example, the AS7C31024B is guaranteed not to exceed 18 mW under nominal full
WC
Alliance Semiconductor
) of 10/12/15/20 ns with output enable access times (t
OE
X
X
H
X
L
Symbol
I
T
T
V
V
OUT
P
bias
stg
D
t1
t2
®
High Z
High Z
High Z
D
Data
D
OUT
IN
–0.50
-0.50
Min
–65
–55
–
–
OE
V
Output disable (I
) of 5, 6, 7, 8 ns are ideal for
CC
Standby (I
Standby (I
+150
+125
Max
+5.0
1.0
20
+0.50
Write (
Read (I
SB
Mode
AS7C31024B
power. If the bus is
SB
SB
ICC
CC
, I
, I
P. 2 of 9
)
)
SB1
SB1
CC
Unit
mA
)
)
°C
°C
W
V
V
)