AM29F016D-90EF Spansion Inc., AM29F016D-90EF Datasheet - Page 38

IC, FLASH, 16MBIT, 90NS, TSOP-48

AM29F016D-90EF

Manufacturer Part Number
AM29F016D-90EF
Description
IC, FLASH, 16MBIT, 90NS, TSOP-48
Manufacturer
Spansion Inc.
Datasheet

Specifications of AM29F016D-90EF

Memory Type
Flash
Memory Size
16Mbit
Memory Configuration
2M X 8
Ic Interface Type
Parallel
Access Time
90ns
Supply Voltage Range
4.5V To 5.5V
Memory Case Style
TSOP
No. Of Pins
48
Cell Type
NOR
Density
16Mb
Access Time (max)
90ns
Interface Type
Parallel
Boot Type
Bottom/Top
Address Bus
21b
Operating Supply Voltage (typ)
5V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
4.5 to 5.5V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8b
Number Of Words
2M
Supply Current
40mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AM29F016D-90EF
Manufacturer:
AMD
Quantity:
1 200
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for programming. See Table 6 for further
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
36
Sector Erase Time
Chip Erase Time
Byte Programming Time
Chip Programming Time (Note 3)
Input Voltage with respect to V
V
Parameter
Minimum Pattern Data Retention Time
Parameter
CC
Symbol
programming typicals assume checkerboard pattern.
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then
does the device set DQ5 = 1. See the section on DQ5 for further information.
information on command definitions.
C
C
C
Current
OUT
IN2
IN
Parameter
Input Capacitance
Output Capacitance
Control Pin Capacitance
A
= 25° C, f = 1.0 MHz.
Parameter Description
SS
CC
on I/O pins
. Test conditions: V
Typ (Note 1)
CC
14.4
32
= 4.5 V, 1,000,000 cycles.
1
7
D A T A
CC
Am29F016D
= 5.0 Volt, one pin at a time.
V
V
V
IN
OUT
IN
Max (Note 2)
= 0
= 0
S H E E T
= 0
43.2
256
300
8
Test Conditions
Test Conditions
°
150° C
125° C
C, 5.0 V V
Unit
sec
sec
sec
µs
CC
, 1,000,000 cycles. Additionally,
Excludes 00h programming prior to
erasure (Note 4)
Excludes system-level overhead
(Note 5)
–100 mA
–1.0 V
Min
Min
10
20
21444E9 November 16, 2009
Comments
Min
8.5
7.5
6
V
Max
CC
+100 mA
7.5
12
9
Max
Years
Years
+ 1.0 V
Unit
Unit
pF
pF
pF

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