M25P80-VMN6P NUMONYX, M25P80-VMN6P Datasheet - Page 42
M25P80-VMN6P
Manufacturer Part Number
M25P80-VMN6P
Description
MEMORY, FLASH, SERIAL, 8MB, 8NSOIC
Manufacturer
NUMONYX
Datasheet
1.M25P80-VMP6G.pdf
(57 pages)
Specifications of M25P80-VMN6P
Memory Size
8Mbit
Clock Frequency
75MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
NSOIC
No. Of Pins
8
Operating Temperature Range
-40°C To +85°C
Package / Case
NSOIC
Memory Type
Flash
Memory Configuration
1M X 8
Interface Type
Serial, SPI
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25P80-VMN6P
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
M25P80-VMN6PBA
Manufacturer:
ST
Quantity:
20 000
Table 15.
1. Typical values given for T
2. t
3. Value guaranteed by characterization, not 100% tested in production.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
6. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are obtained with one
7. int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
42/57
Symbol
t
PP
t
t
sequence including all the bytes versus several sequences of only a few bytes. (1 ≤ n ≤ 256)
t
SE
BE
CH
W
(6)
+ t
CL
must be greater than or equal to 1/ f
Alt.
AC characteristics (75 MHz operation) (continued)
Write Status Register cycle time
Page Program cycle time (256 byte)
Page Program cycle time (n bytes, where n = 1 to 4) —
Page Program cycle time (n bytes, where n = 5 to
256)
Sector erase cycle time
Bulk erase cycle time
75 MHz available only for products made in 110 nm technology,
A
= 25°C.
Test conditions specified in
Parameter
C
Table 10
and
—
—
—
—
—
Min.
Table 12
int(n/8) × 0.02
Typ.
0.64
0.01
1.3
0.6
8
(1)
(7)
Max.
15
20
5
3
Unit
ms
ms
s
s