11AA010T-I/MNY Microchip Technology, 11AA010T-I/MNY Datasheet - Page 3

• Manufacturer Part Number: 11AA010T-I/MNY
• Description: IC, EEPROM, 1KBIT, SERIAL, 100KHZ TDFN-8
• Manufacturer: Microchip Technology

Specifications of 11AA010T-I/MNY

• Memory Size: 1Kbit
• Memory Configuration: 128 X 8 / 64 X 16
• Ic Interface Type: UNI/O
• Clock Frequency: 100kHz
• Supply Voltage Range: 1.8V To 5.5V
• Memory Case Style: TDFN
• No. Of Pins: 8
• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Speed: 100kHz
• Interface: UNI/O™ (Single Wire)
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-TDFN
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 11AA010T-I/MNYTR

• Manchester encoding/
• Synchronization circuitry
• Software addressing
SCIO
I/O Communication
decoding
• Write In Process (WIP) bit
• Write Enable Latch (WEL) bit
• Block protection bits
V
– Write protect for ¼,½ or
CC
full array
Status Register
• Current limited
• Protection during short circuits
• Superior EMI performance
and bus confl icts
Robust Interface
Inside the UNI/O EEPROM
I/O Control
Register
Current-
Limited
Control
Status
Slope
Logic
www.microchip.com/UNIO
Memory
Control
Logic
• Controls for internal clock and data
• Byte or page write
• Erase all or set all
Memory Control Logic
Dec
X
Sense Amp.
R/W Control
Y Decoder
HV Generator
Page Latches
EEPROM
Array
• Density: 1K, 2K, 4K, 8K & 16K
• Endurance > 1 Million Cycles
• Data Retention > 200 Years
EEPROM Memory
Page Buffer
• 16 byte page
GND