M52S32321A-6BIG ELITE SEMICONDUCTOR, M52S32321A-6BIG Datasheet - Page 13

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M52S32321A-6BIG

Manufacturer Part Number
M52S32321A-6BIG
Description
SDRAM, 32MB, 2.5V, 166MHZ, VFBGA90
Manufacturer
ELITE SEMICONDUCTOR
Datasheet

Specifications of M52S32321A-6BIG

Memory Case Style
VFBGA
No. Of Pins
90
Operating Temperature Range
-40°C To +85°C
Operating Temperature Max
85°C
Operating Temperature Min
-40°C
Frequency
166MHz
Package / Case
VFBGA
Memory Type
DRAM - Synchronous
Memory Configuration
2 BLK (512K X 32)
Interface Type
LVCMOS
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ESMT
*Note: 1. All inputs expect CKE & DQM can be don’t care when CS is high at the CLK high going edge.
Elite Semiconductor Memory Technology Inc.
2. Bank active & read/write are controlled by BA.
3.Enable and disable auto precharge function are controlled by A10/AP in read/write command.
4.A10/AP and BA control bank precharge when precharge command is asserted.
A10/AP
A10/AP
BA
0
1
0
1
0
0
1
BA
BA
X
0
1
0
1
0
1
Active & Read/Write
Both Banks
precharge
Disable auto precharge, leave bank A active at end of burst.
Disable auto precharge, leave bank B active at end of burst.
Enable auto precharge, precharge bank A at end of burst.
Enable auto precharge, precharge bank B at end of burst.
Bank A
Bank B
Bank A
Bank B
Operation
Revision : 1.4
Publication Date : Jul. 2007
M52S32321A
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