M52S128324A-7BG ELITE SEMICONDUCTOR, M52S128324A-7BG Datasheet - Page 24

• Manufacturer Part Number: M52S128324A-7BG
• Description: IC, SDRAM, 128MBIT, 143MHZ, FBGA-90
• Manufacturer: ELITE SEMICONDUCTOR

Specifications of M52S128324A-7BG

• Memory Type: DRAM - Sychronous
• Memory Configuration: 2M X 16
• Ic Interface Type: Parallel
• Memory Case Style: FBGA
• No. Of Pins: 90
• Operating Temperature Range: 0°C To +70°C
• Frequency: 133MHz
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Page Size: 128MB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ESMT
8. Burst Stop & Interrupted by Precharge
9. MRS
*Note: 1. t
Elite Semiconductor Memory Technology Inc.
D Q ( C L 2 )
D Q ( C L 3 )
C M D
C L K
C M D
D Q M
C M D
C L K
C L K
2. t
3. Number of valid output data after burst stop : 1,2 for CAS latency = 2,3 respectiviely.
4. PRE : All banks precharge, if necessary.
D Q
MRS can be issued only at all banks precharge state.
BDL
RDL
1 ) M o d e R e g i s t e r S e t
: 2 CLK; Last data in to Row Precharge.
: 1 CLK ; Last data in to burst stop delay.
1 ) W r i t e B u r s t S t o p ( B L = 8 )
2 ) R e a d B u r s t S t o p ( B L = 4 )
P R E
W R
D 0
R D
* N o t e 4
D 1
t
R P
S T O P
Q 0
D 2
M R S
D 3
Q 0
Q 1
t
B D L
2 C L K
* N o t e 3
S T O P
Q 1
D 4
* N o t e 2
A C T
D 5
D Q ( C L 2 )
D Q ( C L 3 )
C M D
D Q M
C M D
C L K
C L K
D Q
1 ) W r i t e i n t e r r u p t e d b y p r e c h a r g e ( B L = 4 )
2 ) R e a d i n t e r r u p t e d b y p r e c h a r g e ( B L = 4 )
W R
R D
D 0
D 1
P R E
Q 0
D 2
Publication Date: Mar. 2008
Revision: 1.3
t
R D L
* N o t e 3
M a s k
Q 0
Q 1
M52S128324A
* N o t e 1
P R E
Q 1
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