74AHCT1G14GW/T1 NXP Semiconductors, 74AHCT1G14GW/T1 Datasheet - Page 2

74AHCT SINGLE GATE, SMD, 74AHCT1G14

74AHCT1G14GW/T1

Manufacturer Part Number
74AHCT1G14GW/T1
Description
74AHCT SINGLE GATE, SMD, 74AHCT1G14
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 74AHCT1G14GW/T1

Output Current
8mA
No. Of Inputs
1
Supply Voltage Range
4.5V To 5.5V
Logic Case Style
SOT-353
No. Of Pins
5
Operating Temperature Range
-40°C To +125°C
Svhc
No SVHC
Logic Type
Inverter Gate
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Philips Semiconductors
FEATURES
QUICK REFERENCE DATA
GND = 0 V; T
Notes
1. C
2. The condition is V
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
2002 Jun 06
t
C
C
SYMBOL
PHL
Symmetrical output impedance
High noise immunity
ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 1000 V.
Low power dissipation
Balanced propagation delays
Very small 5 pin package
Output capability: standard
Specified from 40 to +125 C.
I
PD
Inverting Schmitt trigger
P
f
f
C
V
L = LOW voltage level.
i
o
/t
D
CC
PD
= input frequency in MHz;
L
PLH
= output frequency in MHz;
= output load capacitance in pF;
= C
is used to determine the dynamic power dissipation (P
= supply voltage in Volts.
PD
propagation delay A to Y
input capacitance
power dissipation capacitance
amb
V
CC
= 25 C; t
2
I
PARAMETER
f
= GND to V
i
+ (C
INPUT
r
= t
A
H
L
L
f
V
3.0 ns.
CC
CC
2
.
f
o
) where:
C
C
notes 1 and 2
L
L
= 15 pF; V
= 15 pF; f = 1 MHz;
2
CONDITIONS
APPLICATIONS
DESCRIPTION
The 74AHC1G/AHCT1G14 is a high-speed Si-gate CMOS
device.
The 74AHC1G/AHCT1G14 provides the inverting buffer
function with Schmitt-trigger action. These devices are
capable of transforming slowly changing input signals into
sharply defined, jitter-free output signals.
D
CC
Wave and pulse shapers
Astable multivibrators
Monostable multivibrators.
in W).
= 5 V
74AHC1G14; 74AHCT1G14
OUTPUT
3.2
1.5
12
AHC1G
Y
H
L
TYPICAL
Product specification
4.1
1.5
13
AHCT1G
ns
pF
pF
UNIT

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