LMH6503MT National Semiconductor, LMH6503MT Datasheet - Page 2

• Manufacturer Part Number: LMH6503MT
• Description: AMP, WIDEBAND, VARIABLE GAIN, 6503
• Manufacturer: National Semiconductor

Specifications of LMH6503MT

• No. Of Amplifiers: 1
• Bandwidth: 135MHz
• Gain Accuracy: 4.4dB
• No. Of Channels: 1
• Supply Voltage Range: 5V To 12V
• Amplifier Case Style: TSSOP
• No. Of Pins: 14
• Operating Temperature Range: -40°C To
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Frequency Domain Response
BW
GF
Att Range Flat Band (Relative to Max Gain)
BW
Control
PL
G Delay
CT (dB)
GR
Time Domain Response
t
OS%
SR
∆G Rate
Distortion & Noise performance
HD2
HD3
THD
En tot
I
DG
DP
r
n
Symbol
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
_DIFF
, t
ESD Tolerance: (Note 4)
Input Current
V
Output Current
Supply Voltages (V
Voltage at Input/ Output pins
Soldering Information:
f
IN
Human Body
Machine Model
Differential
=
±
0.1V, R
-3dB Bandwidth
Gain Flatness
Attenuation Range (Note 13)
Gain Control Bandwidth
Linear Phase Deviation
Group Delay
Feed-through
Gain Adjustment Range
Rise and Fall Time
Overshoot
Slew Rate
Gain Change Rate
2
3
Total Harmonic Distortion
Total Equivalent Input Noise
Input Noise Current
Differential Gain
Differential Phase
nd
rd
Harmonic Distortion
Harmonic Distortion
L
= 100Ω, V
+
- V
Parameter
−
)
G
= +1V. Boldface limits apply at the temperature extremes.
V
+
(Note 2)
120mA (Note 3)
+0.8V,V
(Note 1)
V
V
V
−1V
V
DC to 60MHz
DC to 130MHz
V
Referred)
f
f
0.5V Step
0.5V Step
4V Step (Note 5)
V
output
2V
2V
2V
1MHz to 150MHz
1MHz to 150MHz
f = 4.43MHz, R
Sync
f = 4.43MHz, R
Sync
±
±
±
OUT
OUT
OUT
G
G
<
<
IN
0.2dB Flatness, f
0.1dB, f
(V
PP
PP
PP
−
= 0V (Note 11)
= −1.2V, 30MHz (Output
±
10MHz
30MHz
= 0.3V, 10%−90% of final
+
<
- 0.8V
, 20MHz
, 20MHz
, 20MHz
10mA
12.6V
200V
<
<
<
J
−V
2KV
V
= 25˚C, V
0.5
0.5
0.5V
G
−
Conditions
<
)
<
PP
PP
30MHZ
PP
1V,
, A
L
L
2
,
V(MAX)
= 150Ω, Neg.
= 150Ω, Neg.
S
±
0.2dB
<
=
Operating Ratings
Storage Temperature Range
Junction Temperature
Supply Voltages (V
Temperature Range
Thermal Resistance:
±
30MHZ
Infrared or Convection (20 sec)
Wave Soldering (10 sec)
14-Pin SOIC
14-Pin TSSOP
5V, A
= 100
V(MAX)
(Note 6)
= 10, V
Min
+
- V
CM
−
)
= 0V, R
(Note 6)
138˚C/W
160˚C/W
1800
0.15
0.22
Typ
135
100
−48
−60
−61
−57
6.6
1.6
2.6
2.2
4.6
6.6
2.4
50
40
20
79
68
10
(Note 1)
θ
JA
F
= 1kΩ, R
(Note 6)
−65˚C to +150˚C
Max
−40˚C to +85˚C
45˚C/W
51˚C/W
G
θ
= 174Ω, V
5V to 12V
JC
+150˚C
nV/
pA/
235˚C
260˚C
dB/ns
Units
MHz
MHz
MHz
MHz
V/µs
dBc
dBc
dBc
deg
deg
dB
dB
ns
ns
%
%
IN -