LMH6628MA National Semiconductor, LMH6628MA Datasheet - Page 10

IC, OP-AMP, 300MHZ, 550V/µs, SOIC-8

LMH6628MA

Manufacturer Part Number
LMH6628MA
Description
IC, OP-AMP, 300MHZ, 550V/µs, SOIC-8
Manufacturer
National Semiconductor
Datasheet

Specifications of LMH6628MA

Op Amp Type
Voltage Feedback
No. Of Amplifiers
2
Bandwidth
300MHz
Slew Rate
550V/µs
Supply Voltage Range
± 2.5V To ± 6V
Amplifier Case Style
SOIC
No. Of Pins
8
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LMH6628MA
Manufacturer:
NS/国半
Quantity:
20 000
Company:
Part Number:
LMH6628MA
Quantity:
5 000
www.national.com
Application Section
A current source, built around Q1, provides the necessary
bias current for the second amplifier and prevents saturation
when power is applied. The resistor, R, closes the loop while
diode D2 prevents negative saturation when V
V
capacitor’s voltage.
The maximum speed of detection is limited by the delay of
the op amps and the diodes. The use of Schottky diodes will
provide faster response.
ADJUSTABLE OR BANDPASS EQUALIZER
A "boost" equalizer can be made with the LMH6628 by
summing a bandpass response with the input signal, as
shown in Figure 7.
The overall transfer function is shown in Eq. 5.
C
. A MOS-type switch (not shown) can be used to reset the
FIGURE 6.
FIGURE 7.
(Continued)
20038537
IN
is less than
20038506
10
To build a boost circuit, use the design equations Eq. 6 and
Eq. 7.
Select R
frequency circuits - R
10pF and 2000pF. Use Eq. 7 to determine the parallel com-
bination of R
5kΩ criteria or by other requirements based on the imped-
ance V
ing the value of K from Eq. 8.
Figure 8 shows an example of the response of the circuit of
Figure 9, where f
follows: R
= 50Ω, C = 120pF.
in
2
is capable of driving. Finish the design by determin-
a
and C using Eq. 6. Use reasonable values for high
=2.1kΩ, R
a
and R
o
is 2.3MHz. The component values are as
b
b
. Select R
2
= 68.5Ω, R
between 10Ω and 5kΩ, C between
FIGURE 8.
a
and R
2
= 4.22kΩ, R = 500Ω, KR
b
by either the 10Ω to
20038543
(4)
(5)
(6)
(7)

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