LF411ACN National Semiconductor, LF411ACN Datasheet - Page 3

• Manufacturer Part Number: LF411ACN
• Description: IC, OP-AMP, 4MHZ, 15V/µs, DIP-8
• Manufacturer: National Semiconductor

Specifications of LF411ACN

• Op Amp Type: Low Offset Voltage
• No. Of Amplifiers: 1
• Bandwidth: 4MHz
• Slew Rate: 15V/µs
• Supply Voltage Range: 10V To 44V
• Amplifier Case Style: DIP
• No. Of Pins: 8
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

THD
Symbol
AC Electrical Characteristic
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 3: For operating at elevated temperature, these devices must be derated based on a thermal resistance of θ
Note 4: These devices are available in both the commercial temperature range 0˚C≤T
temperature range is designated by the position just before the package type in the device number. A “C” indicates the commercial temperature range and an “M”
indicates the military temperature range. The military temperature range is available in “H” package only.
Note 5: Unless otherwise specified, the specifications apply over the full temperature range and for V
I
Note 6: The LF411A is 100% tested to this specification. The LF411 is sample tested to insure at least 90% of the units meet this specification.
Note 7: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, T
production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation, P
recommended if input bias current is to be kept to a minimum.
Note 8: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice, from
Note 9: RETS 411X for LF411MH and LF411MJ military specifications.
Note 10: Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate
outside guaranteed limits.
Typical Performance Characteristics
±
B
15V to
, and I
OS
±
5V for the LF411 and from
Total Harmonic Distortion
are measured at V
Parameter
Input Bias Current
CM
=0.
±
20V to
±
5V for the LF411A.
A
V
BW=20 Hz−20 kHz
D
V
O
00565511
. T
=+10, R
(Note 5) (Continued)
=20 Vp-p,
j
=T
Conditions
A
+θ
jA
L
P
=10k,
D
where θ
3
jA
is the thermal resistance from junction to ambient. Use of a heat sink is
Min
A
≤70˚C and the military temperature range −55˚C≤T
LF411A
<
S
Typ
0.02
=
±
20V for the LF411A and for V
Input Bias Current
Max
j
A.
Min
LF411
<
Typ
0.02
S
=
±
15V for the LF411. V
Max
00565512
j
. Due to limited
www.national.com
A
≤125˚C. The
Units
%
OS
,