73050 Pomona Electronics, 73050 Datasheet - Page 2

• Manufacturer Part Number: 73050
• Description: CONN PLUG N STR CRIMP RG58, 141
• Manufacturer: Pomona Electronics
• Series: N Typer
• Type: N Type Plugr

Specifications of 73050

• Connector Type: Plug, Male Pins
• Impedance: 50 Ohm
• Connector Style: N Type
• Contact Termination: Crimp, Single
• Mounting Type: Free Hanging (In-Line)
• Fastening Type: Threaded
• Cable Group: RG-58, 141
• Frequency - Max: 6GHz
• Frequency-max: 6GHz
• Body Style: Straight Plug
• Coaxial Termination: Crimp
• Rg Cable Type: RG-58, 141
• Contact Material: Brass
• Contact Plating: Gold
• Frequency Max: 6GHz
• Product: Connector
• Rf Series: N
• Gender: Plug
• Polarity: Normal
• Shell Plating: Nickel
• Termination Style: Crimp
• Cable Type: RG/U 58, 141
• Housing Material: Brass
• Maximum Frequency: 6 GHz
• Angle: Straight
• Finish, Housing: Nickel Plated
• Material, Contact: Brass
• Material, Dielectric: PTFE
• Material, Housing: Brass
• Mating Type: Bayonet
• Primary Type: N
• Voltage, Rating: 1500 V
• Frequency Range: DC–6 GHz
• Insulation Reistance: ≤5000 MΩ
• Dielectric Withstand Voltage: 1500 V
• Vswr: ≤1.5 V
• Number Of Insertions: 500 Cycles MinimumFeatures
• Connector Accepts Cable Types Rg/u: 58, 141
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Features: -
• Color: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
E
I
I
I
V
t
Q
Static @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
2
GS(th)
AS
SD
DS(on)
G
iss
oss
rss
g
sw
oss
rr
Q
Q
Q
Q
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 25°C (unless otherwise specified)
Parameter
Parameter
Ù
Parameter
gs2
Ù
+ Q
gd
)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.6
20
6580
2070
0.60
-4.1
–––
–––
–––
–––
–––
–––
–––
–––
840
–––
–––
–––
1.8
1.2
4.4
12
47
14
15
14
19
30
23
95
25
10
32
26
Typ.
-100
0.65
–––
––– mV/°C
––– mV/°C
500
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
200
260
2.5
1.8
2.5
1.4
1.5
71
48
39
5
mΩ
mA
mA
nC
nC
nC
µA
nA
pF
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
I
V
V
V
V
V
V
V
V
I
See Fig. 17
V
V
I
Clamped Inductive Load
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
J
J
= 10mA, reference to 25°C
= 17A
= 26A
= 25°C, I
= 25°C, I
= 0V, I
= 4.5V, I
= 10V, I
= V
= 20V, V
= 16V, V
= 16V, V
= 12V
= -12V
= 10V, I
= 10V
= 4.5V
= 10V, V
= 16V, V
= 0V
= 10V
GS
Max.
230
, I
26
D
Conditions
Conditions
D
S
F
D
D
= 1.0mA
D
GS
GS
GS
GS
GS
= 250µA
= 25A
= 25A, V
= 15A
= 26A
= 12A
e
= 0V
= 0V
= 0V, T
= 0V
= 4.5V
www.irf.com
D
e
e
= 10mA
Ãe
GS
G
J
= 125°C
= 0V
Units
mJ
A
e
D
S