NTD65N03R-35G ON Semiconductor, NTD65N03R-35G Datasheet

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NTD65N03R-35G

Manufacturer Part Number
NTD65N03R-35G
Description
MOSFET Small Signal 25V 65A N-Channel
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD65N03R-35G

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0097 Ohms
Forward Transconductance Gfs (max / Min)
27 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
65 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
IPAK-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD65N03R-35G
Manufacturer:
ON Semiconductor
Quantity:
135
NTD65N03R
Power MOSFET
25 V, 65 A, Single N−Channel, DPAK
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
2. Surface−mounted on FR4 board using the minimum recommended pad size
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 3
Continuous Drain
Current (R
by Die
Continuous Drain
Current (R
by Wire
Power Dissipation
(R
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
Operating Junction and Storage
Temperature
Drain−to−Source (dv/dt)
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V
L = 1.0 mH, R
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Drain−to−Source Voltage
Gate−to−Source Voltage
Low R
Ultra Low Gate Charge
Low Reverse Recovery Charge
Pb−Free Packages are Available
Desktop CPU Power
DC−DC Converters
High and Low Side Switch
(Cu area = 1.127 in sq [1 oz] including traces).
(Cu area = 0.15 in sq) [1 oz] including traces.
qJC
)
DS(on)
DD
qJC
qJC
= 24 V, V
) Limited
) Limited
G
= 25 W)
Parameter
GS
(T
Steady
Steady
Steady
State
State
State
= 10 V, I
J
= 25°C unless otherwise noted)
t
p
= 10 ms
L
T
T
T
T
T
T
T
T
T
T
= 12 A,
C
C
C
C
A
A
A
A
A
A
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
Symbol
T
V
dv/dt
V
J
E
I
P
P
P
, T
DSS
DM
T
I
I
I
I
I
GS
AS
D
D
D
D
S
D
D
D
L
stg
−55 to
Value
"20
11.4
1.88
71.7
130
175
260
8.9
9.5
7.4
1.3
2.0
2.1
25
65
45
32
50
1
Unit
V/ns
mJ
°C
°C
W
W
W
V
V
A
A
A
A
A
A
CASE 369AA
(Bend Lead)
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1 2
Gate
STYLE 2
V
DPAK
(BR)DSS
1
25 V
3
Drain
Drain
ORDERING INFORMATION
4
2
4
Y
WW
65N03 = Device Code
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
http://onsemi.com
G
3
Source
(Straight Lead)
9.7 mW @ 4.5 V
6.5 mW @ 10 V
R
CASE 369D
= Year
= Work Week
= Pb−Free Package
1
STYLE 2
DS(on)
N−Channel
2
DPAK
3
Publication Order Number:
D
TYP
4
Gate
S
1
(Straight Lead)
NTD65N03R/D
Drain
CASE 369AC
Drain
4
2
I
3 IPAK
1
D
65 A
MAX
2 3
3
Source
4

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NTD65N03R-35G Summary of contents

Page 1

... V N−Channel CASE 369D CASE 369AC DPAK 3 IPAK (Straight Lead) (Straight Lead) STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain Gate Source Source 2 Drain Drain Y = Year WW = Work Week 65N03 = Device Code G = Pb−Free Package ORDERING INFORMATION Publication Order Number: NTD65N03R/D ...

Page 2

... Surface−mounted on FR4 board using pad size (Cu area = 1.127 oz] including traces). 4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0. oz] including traces). 5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. NTD65N03R Parameter (T = 25°C unless otherwise noted) ...

Page 3

... I , DRAIN CURRENT (A) D Figure 3. On−Resistance versus Drain Current and Temperature 1 1.4 1.2 1.0 0.8 0.6 −50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTD65N03R 140 T = 25°C ≥ 120 4.5 V 100 4 3 3 25° Figure 2. Transfer Characteristics ...

Page 4

... C rss DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 100 GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation versus Gate Resistance 100 10 1 0.1 NTD65N03R 25° Drain−to−Source Voltage versus Total Charge d(off d(on 100 0 Figure 10. Diode Forward Voltage versus ...

Page 5

... Order Number NTD65N03R NTD65N03RG NTD65N03RT4 NTD65N03RT4G NTD65N03R−1 NTD65N03R−1G NTD65N03R−35 NTD65N03R−35G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTD65N03R Package DPAK−3 DPAK−3 (Pb− ...

Page 6

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTD65N03R PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA−01 ISSUE A SEATING −T− PLANE SOLDERING FOOTPRINT* 6.20 3 ...

Page 7

... −T− SEATING K PLANE 0.13 (0.005 SEATING PLANE NTD65N03R PACKAGE DIMENSIONS DPAK CASE 369D−01 ISSUE IPAK, STRAIGHT LEAD CASE 369AC−01 ISSUE 0.13 (0.005) W http://onsemi.com 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM ...

Page 8

... N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 8 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD65N03R/D ...

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