SI4866DY-T1-E3 Vishay, SI4866DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4866DY-T1-E3
• Description: MOSFET Power 12 Volt 11 Amp 3.0W
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI4866DY-T1-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0055 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 11 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 12V
• On Resistance Rds(on): 5.5mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0055Ohm
• Drain-source On-volt: 12V
• Gate-source Voltage (max): ±8V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si4866DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71699.
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.4
0.2
0.0
0.01
0.01
- 50
0.1
0.1
2
1
2
1
10
10
- 4
- 4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
I
T
D
J
= 250 µA
25
- Temperature (°C)
10
- 3
50
10
- 3
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Normalized Thermal Transient Impedance, Junction-to-Foot
100
10
- 2
125
Square Wave Pulse Duration (s)
150
10
Square Wave Pulse Duration (s)
- 2
10
- 1
10
200
160
120
1
80
40
- 1
0
0.001
0.01
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
1
Time (s)
t
1
A
S09-0228-Rev. D, 09-Feb-09
= P
0.1
t
2
Document Number: 71699
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 67 °C/W
1
600
10
10