TISP5115H3BJR-S Bourns Inc., TISP5115H3BJR-S Datasheet - Page 4

• Manufacturer Part Number: TISP5115H3BJR-S
• Description: Sidacs Forward Conducting Unidirectional
• Manufacturer: Bourns Inc.

Specifications of TISP5115H3BJR-S

• Breakover Current Ibo Max: 60 A
• Rated Repetitive Off-state Voltage Vdrm: 90 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Forward Voltage Drop: 3 V
• Mounting Style: SMD/SMT
• Package / Case: DO-214AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Parameter Measurement Information
Characteristic
TISP5xxxH3BJ Overvoltage Protection Series
Switching
-v
I
(BO)
Quadrant III
V
V
(BR)
(BO)
I
(BR)
V
(BR)M
V
DRM
All Measurements are Referenced to the Thyristor Anode, A (Pin 1)
I
DRM
Figure 1. Voltage-Current Characteristic for Terminal Pair
V
D
V
T
I
PPSM
I
I
FSM
FRM
I
F
+i
-i
I
I
I
I
I
I
D
T
TRM
TSM
H
PPSM
V
F
Customers should verify actual device performance in their specific applications.
Specifications are subject to change without notice.
Characteristic
Conduction
JANUARY 1998 - REVISED JANUARY 2007
Forward
Quadrant I
PM-TISP5xxx-001-a
+v