N42180-06-T1-HL Seoul Semiconductor Inc, N42180-06-T1-HL Datasheet - Page 11

• Manufacturer Part Number: N42180-06-T1-HL
• Description: LED WARM WHITE 2800K 350MA SMD
• Manufacturer: Seoul Semiconductor Inc
• Series: Z Power, P4r

Specifications of N42180-06-T1-HL

• Viewing Angle: 124°
• Package / Case: 2-SMD, Gull Wing
• Lumens @ Current - Max: 154lm
• Lumens/watt @ Current - Test: 66lm/W
• Color: White, Warm
• Current - Test: 350mA
• Luminous Flux @ Current - Test: 75lm
• Current - Max: 800mA
• Voltage - Forward (vf) Typ: 3.25V
• Wavelength: 2800K
• Lens Style/size: Round, 5.6mm
• Mounting Type: Surface Mount
• Illumination Color: Warm White
• Wavelength/color Temperature: 3000 K
• Luminous Flux: 72 lm
• Power Rating: 3.28 W
• Operating Voltage: 3.3 V
• Operating Current: 800 mA
• Minimum Operating Temperature: - 40 C
• Maximum Operating Temperature: + 85 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 897-1048-2

*Notes :
1. Please do not drive at rated current more than 5 sec. without proper heat sink
[1] SSC maintains a tolerance of ±10% on flux and power measurements.
[2] Ф
[3] Peak wavelength is derived from the CIE 1931 Chromaticity diagram.
[4] A tolerance of ±0.06V on forward voltage measurements
[5] Rθ
[6] It is included the zener chip to protect the product from ESD.
8. Photosynthetic Red (P42180)
11-2 Absolute Maximum Ratings
11-1 Electro-Optical characteristics at I
Operating Temperature
Storage Temperature
Junction Temperature
A tolerance of ±1nm for peak wavelength
Characteristics for Z-Power LED
V
ESD Sensitivity
Power Dissipation
J-C
is the total Radiant power output as measured with an integrating sphere.
Forward Current
Thermal resistance
Peak Wavelength
Forward Voltage
Parameter
is measured with only emitter.
Radiant Power
Parameter
View Angle
[6]
[1]
[4]
[3]
--------------------------Caution--------------------------
[5]
Symbol
T
T
P
T
I
opr
-
stg
F
d
j
Symbol
F
2Θ 1/2
=350mA, T
Ф
R θ
V
V
λ
11
P
J-C
F
[2]
A
=25ºC
Min
150
655
2.0
±10,000V HBM
-40 ~ +100
-40 ~ +85
Document No. : SSC-QP-7-07-24 (Rev.00)
Value
700
125
2.1
Value
Typ
130
240
660
2.4
9
www.seoulsemicon.com
www.seoulsemicon.com
Max
280
665
3.0
January. 2011
January. 2011
Unit
mA
ºC
ºC
ºC
W
-
ºC /W
Unit
deg.
mW
nm
V
Rev. 17
Rev. 17