BD00HC5WEFJ-E2 Rohm Semiconductor, BD00HC5WEFJ-E2 Datasheet - Page 10

• Manufacturer Part Number: BD00HC5WEFJ-E2
• Description: IC REG LDO 1.5A ADJ 8-HTSOP
• Manufacturer: Rohm Semiconductor

Specifications of BD00HC5WEFJ-E2

• Regulator Topology: Positive Adjustable
• Voltage - Output: 1.5 V ~ 7 V
• Voltage - Input: 4.5 V ~ 8 V
• Voltage - Dropout (typical): 0.6V @ 1.5A
• Number Of Regulators: 1
• Current - Output: 1.5A (Max)
• Operating Temperature: -25°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Limit (min): -
• Other names: BD00HC5WEFJ-E2TR

(11). Regarding input pin of the IC
(12). Ground Wiring Pattern.
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P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or
transistor. For example, the relation between each potential is as follows:
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns, placing
a single ground point at the ground potential of application so that the pattern wiring resistance and voltage variations
caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the GND
wiring pattern of any external components, either.
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be
used.
Parasitic element
Pin A
N
P
+
N
GND
P
P substrate
P
+
N
Resistor
Pin A
Parasitic
element
10/11
Parasitic element
Pin B
N
P
+
C
B
N
E
GND
P
P substrate
Transistor (NPN)
P
+
N
GND
Other adjacent elements
Pin B
Technical Note
2010.04 - Rev.A
B
C
E
GND
Parasitic
element