RC28F256P33BFA NUMONYX, RC28F256P33BFA Datasheet - Page 9
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RC28F256P33BFA
Manufacturer Part Number
RC28F256P33BFA
Description
IC FLASH 256MBIT 95NS 64EZBGA
Manufacturer
NUMONYX
Series
Axcell™r
Specifications of RC28F256P33BFA
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
256M (16Mx16)
Speed
95ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-EZBGA
Cell Type
NOR
Density
256Mb
Interface Type
Parallel/Serial
Boot Type
Bottom
Address Bus
25b
Operating Supply Voltage (typ)
2.5/3/3.3V
Operating Temp Range
-40C to 85C
Package Type
EZBGA
Sync/async
Async/Sync
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.3V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
32M
Supply Current
50mA
Mounting
Surface Mount
Pin Count
64
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
898897
898897
RC28F256P33BF 898897
898897
RC28F256P33BF 898897
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RC28F256P33BFA
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Conversion Guide: P33 130nm to 65nm
4.0
4.1
Table 3:
4.2
Note:
Application Note
9
Performance
Key AC Read Specification Comparison
Hardware Design Considerations
The P33 130nm and P33 65nm flash memory devices provide reliable, two-bit-per-cell
storage technology for embedded applications. They satisfy the need for more density
in less space, with a high-speed interface. Both flash devices feature asymmetrically-
blocked architecture, Buffered Enhanced Factory Programming, and synchronous-burst
read mode. The following sections discuss hardware design considerations when
converting from the P33 130nm device to the P33 65nm device.
AC Read Specifications
Refer to the product datasheet for detailed list of all read timing specifications:
• Numonyx
• Numonyx
AC Write/Erase Specifications
Refer to the product datasheet for detailed list of all write and erase timing
specifications.
• Numonyx
• Numonyx
Clock Frequency (Max)
Asynchronous Access (t
Asynch Page Access time (t
Clock-to-Data Burst Access (t
Burst Data Hold Time (t
Address and ADV# Setup Time (t
CE# Setup Time (t
Rise/Fall Time (t
Clock High/Low Time (t
Vcc power valid to RST# de-assertion (high)
Async Page Size
Synchronous Burst Length (word)
Burst Suspend Mode
Features / Specifications
TM
TM
TM
TM
FCLK/LCLK
StrataFlash
StrataFlash
StrataFlash
StrataFlash
ELCH
)
CH/CL
AVQV
CHQX
)
APA
)
)
t
CHQV
VLQV
)
®
®
®
®
AVCH
)
t
Embedded Memory (P33-130nm) Datasheet (314749)
Embedded Memory (P33-65nm) Datasheet (320003)
Embedded Memory (P33-130nm) Datasheet (314749)
Embedded Memory (P33-65nm) Datasheet (320003)
ELQV
, t
)
VLCH
)
4-, 8-, 16-, and Cont.
Easy BGA: 85 ns
P33 130nm
TSOP: 95 ns
4 words
52 MHz
3.0 ns
25 ns
17 ns
60 us
3 ns
9 ns
9 ns
5 ns
Yes
Order Number: 320005-04
4-, 8-, 16- and Cont.
Easy BGA: 95 ns
TSOP: 105 ns
P33 65nm
16 words
52 MHz
300 us
3.0 ns
25 ns
17 ns
9 ns
9 ns
3ns
5ns
Yes
Sep 2008