PC28F256P30TFA NUMONYX, PC28F256P30TFA Datasheet - Page 57
![IC FLASH 256MBIT 100NS 64EZBGA](/photos/7/29/72923/pc28f256p30tf_902056_sml.jpg)
PC28F256P30TFA
Manufacturer Part Number
PC28F256P30TFA
Description
IC FLASH 256MBIT 100NS 64EZBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet
1.PF48F4000P0ZBQEF.pdf
(94 pages)
Specifications of PC28F256P30TFA
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
256M (16Mx16)
Speed
100ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
902056
902056
PC28F256P30TF 902056
902056
PC28F256P30TF 902056
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PC28F256P30TFA
Manufacturer:
INTEL
Quantity:
21 890
Company:
Part Number:
PC28F256P30TFA
Manufacturer:
ROHM
Quantity:
359
Company:
Part Number:
PC28F256P30TFA
Manufacturer:
Micron Technology Inc
Quantity:
10 000
P30-65nm
Figure 23: Asynchronous Page-Mode Read Timing
Note:
Figure 24: Synchronous Single-Word Array or Non-array Read Timing
1.
2.
Datasheet
57
Address [A]
Data [D/Q]
ADV# [V]
WAIT [T]
OE# [G]
A[Max:4] [A]
DATA [D/Q]
WAIT shown deasserted during asynchronous read mode (RCR.10=0, WAIT asserted low).
CLK [C]
CE# [E]
WAIT is driven per OE# assertion during synchronous array or non-array read, and can be configured to assert either
during or one data cycle before valid data.
This diagram illustrates the case in which an n-word burst is initiated to the flash memory array and it is terminated by
CE# deassertion after the first word in the burst.
WAIT [T]
OE# [G]
CE# [E]
A[3:0]
ADV#
R105
R105
R301
R303
R105
R105
R101
R104
R104
R101
R102
R6
R2
R3
R15
R306
R4
0
R106
R7
Q1
R2
R3
R4
R10
Valid Address
R108
1
Q2
R307
R106
R304
R10
2
R108
Q3
R10
R305
R312
R108
F
R9
R17
Q16
R8
R9
Order Number: 320002-10
R10
R8
R13
Mar 2010