JS28F256P30TFA NUMONYX, JS28F256P30TFA Datasheet - Page 6

• Manufacturer Part Number: JS28F256P30TFA
• Description: IC FLASH 256MBIT 110NS 56TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of JS28F256P30TFA

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 256M (16Mx16)
• Speed: 110ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 56-TSOP
• Package: 56TSOP
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Top
• Typical Operating Supply Voltage: 1.8 V
• Sector Size: 32KByte x 4|128KByte x 255
• Timing Type: Asynchronous|Synchronous
• Interface Type: Parallel|Serial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 902052; 902052; JS28F256P30TF 902052

1.3
Table 1:
Table 2:
Datasheet
6
Lower Param Die
Upper Param Die
Lower Param Die
Upper Param Die
Virtual Chip Enable Truth Table for 512 Mb (QUAD+ Package)
Virtual Chip Enable Truth Table for 512 Mb (Easy BGA Packages)
Virtual Chip Enable Description
The P30-65nm 512-Mbit devices employ a Virtual Chip Enable which combines two
256-Mbit die with a common chip enable, F1-CE# for QUAD+ packages or CE# for Easy
BGA packages. Refer to
maximum address bit is then used to select between the die pair with F1-CE#/CE#
asserted depending upon the package option used. When chip enable is asserted and
The maximum address bit is low (
enable is asserted and the maximum address bit is high (
is selected. Refer to
Die Selected
Die Selected
Table 1
Figure 9 on page 18
and
Table 2
V
IL
), The lower parameter die is selected; when chip
for additional details.
F1-CE#
and
CE#
L
L
L
L
Figure 10 on page 18
V
IH
), the upper parameter die
Order Number: 320002-10
for detail. The
A24
A25
H
H
L
L
P30-65nm
Mar 2010