MCIMX515DVK8C Freescale Semiconductor, MCIMX515DVK8C Datasheet - Page 43
MCIMX515DVK8C
Manufacturer Part Number
MCIMX515DVK8C
Description
IC MPU I.MX51 527MABGA
Manufacturer
Freescale Semiconductor
Series
i.MX51r
Datasheets
1.MCIMX512DJM8C.pdf
(200 pages)
2.MCIMX515DJM8C.pdf
(2 pages)
3.MCIMX515DVK8C.pdf
(156 pages)
Specifications of MCIMX515DVK8C
Core Processor
ARM Cortex-A8
Core Size
32-Bit
Speed
800MHz
Connectivity
1-Wire, EBI/EMI, Ethernet, I²C, IrDA, MMC, SPI, SSI, UART/USART, USB OTG
Peripherals
DMA, I²S, LCD, POR, PWM, WDT
Number Of I /o
128
Program Memory Type
ROMless
Ram Size
128K x 8
Voltage - Supply (vcc/vdd)
0.8 V ~ 1.15 V
Oscillator Type
External
Operating Temperature
-20°C ~ 85°C
Package / Case
257-LFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Program Memory Size
-
Eeprom Size
-
Data Converters
-
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Manufacturer
Quantity
Price
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Part Number:
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Manufacturer:
FREESCALE
Quantity:
66
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MCIMX515DVK8C
Manufacturer:
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Quantity:
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Part Number:
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AC electrical characteristics in DDR2 mode for Fast mode and for ovdd=1.65-1.95V, ipp_hve=0 are
placed in
AC electrical characteristics in DDR2 mode for Slow mode and for ovdd=1.65-1.95V, ipp_hve=0 are
placed in
Freescale Semiconductor
1
2
3
1
2
3
Output Pad Transition Times
Output Pad Propagation Delay, 50%-50%
Output Pad Slew Rate
Output Pad di/dt
Input Pad Transition Times
Input Pad Propagation Delay (DDR input),
50%-50%
Maximum Input Transition Times
Output Pad Transition Times
Output Pad Propagation Delay, 50%-50%
Output Pad Slew Rate
Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,
tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5=101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3 V,
IO 1.95 V, –40 °C and s0-s5=000000.
Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO
1.8 V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and –40 °C.
Hysteresis mode is recommended for input with transition time greater than 25 ns.
Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,
tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5=101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3
V, IO 1.95 V, -40 °C and s0-s5=000000.
Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO 1.8
V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and -40 °C.
Hysteresis mode is recommended for input with transition time greater than 25 ns.
Table
Table
2
Table 42. AC Electrical Characteristics of DDR2_clk IO Pads for Slow mode and for
Table 41. AC Electrical Characteristics of DDR2_clk IO Pads for Fast mode and
41.
1
42.
i.MX51 Applications Processors for Consumer and Industrial Products, Rev. 4
Parameter
Parameter
1
1
2
1
1
3
1
1
ovdd=1.65 – 1.95 V (ipp_hve=0)
for ovdd=1.65 – 1.95 V
Symbol
Symbol
di/dt
tpo
trm
tpo
tps
tps
tpr
tpr
trfi
tpi
Condition
Condition
1.2 pF
1.2 pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
Test
Test
—
—
0.58/0.57
1.29/1.28
1.05/1.03
1.54/1.56
2.02/2.05
0.91/0.91
0.09/0.09 0.132/0.128 0.212/0.213
0.74/0.76
1.40/1.39
1.56/1.61
2.12/2.22
1.58/1.54
0.84/0.84
0.3/0.36
rise/fall
rise/fall
Min
Min
390
—
0.45/0.44
0.97/0.93
1.40/1.31
1.75/1.69
2.40/2.45
0.69/0.72
1.18/1.20
2.02/2.08
2.49/2.61
1.57/1.50
0.92/0.90
1.11/1.16
0.5/0.52
Typ
201
Typ
—
Electrical Characteristics
0.45/0.45
0.82/0.85
2.12/1.96
2.43/2.31
2.20/2.20
1.21/1.16
0.82/0.94
1.04/1.01
1.48/1.47
3.45/3.33
4.05/3.98
0.95/0.98
0.67/0.67
rise/fall
rise/fall
Max
Max
99
5
mA/ns
Units
Units
V/ns
V/ns
ns
ns
ns
ns
ns
ns
ns
43