NBVSBA015LNHTAG ON Semiconductor, NBVSBA015LNHTAG Datasheet - Page 3

• Manufacturer Part Number: NBVSBA015LNHTAG
• Description: IC OSC VCXO 200MHZ 6CLCC
• Manufacturer: ON Semiconductor
• Series: PureEdge™r
• Type: Voltage Controlled Crystal Oscillator (VCXO)r

Specifications of NBVSBA015LNHTAG

• Current - Supply: 90mA
• Mounting Type: Surface Mount
• Frequency: 200MHz
• Voltage - Supply: 2.375 V ~ 3.63 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 6-CLCC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Count: -

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
3. Measurement taken with outputs terminated with 50 W to V
Table 5. DC CHARACTERISTICS
Table 4. MAXIMUM RATINGS
Symbol
V
T
V
T
I
Symbol
V
T
out
DD
stg
sol
IN
A
OUTPP
V
V
I
V
V
I
DD
I
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
IH
OH
IL
OL
IH
IL
Positive Power Supply
Control Input (V
LVPECL Output Current
Operating Temperature Range
Storage Temperature Range
Wave Solder
Power Supply Current
Input HIGH Voltage
Input LOW Voltage
Input HIGH Current
Input LOW Current
Output HIGH Voltage
Output LOW Voltage
Output Voltage Amplitude
C
Characteristic
Parameter
and OE)
(V
DD
= 2.5 V ± 5%; 3.3 V ± 10%, GND = 0 V, T
OE
OE
OE
OE
http://onsemi.com
DD
Conditions
See Figure 4
Condition 1
Continuous
GND = 0 V
− 2.0 V. See Figure 3.
Surge
3
V
GND − 200
V
V
V
IN
DD
IN
DD
2000
−100
−100
A
Min.
≥ GND − 200 mV
Condition 2
≤ V
−1945
−1195
= −40°C to +85°C) (Note 3)
DD
+ 200 mV
Typ.
700
90
−55 to +120
−40 to +85
Rating
V
V
DD
260
4.6
25
50
DD
Max.
+100
+100
V
110
800
−1600
DD
−945
Units
Units
mA
mV
mV
mV
mV
mV
mA
mA
mA
°C
°C
°C
V
V