BTA316-800ET,127 NXP Semiconductors, BTA316-800ET,127 Datasheet - Page 3
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BTA316-800ET,127
Manufacturer Part Number
BTA316-800ET,127
Description
TRIAC 600V 16A TO-220AB
Manufacturer
NXP Semiconductors
Datasheet
1.BTA316-800ET127.pdf
(14 pages)
Specifications of BTA316-800ET,127
Package / Case
TO-220-3
Current - On State (it (rms)) (max)
16A
Triac Type
Logic - Sensitive Gate
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
15mA
Voltage - Off State
800V
Current - Gate Trigger (igt) (max)
10mA
Current - Non Rep. Surge 50, 60hz (itsm)
140A, 150A
Voltage - Gate Trigger (vgt) (max)
1.5V
Rated Repetitive Off-state Voltage Vdrm
800 V
On-state Rms Current (it Rms)
16 A
Gate Trigger Voltage (vgt)
0.8 V to 1.5 V
Gate Trigger Current (igt)
10 mA
Holding Current (ih Max)
15 mA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-5225
NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BTA316-800ET
Product data sheet
Symbol
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
Fig 1.
stg
j
DRM
t
GM
G(AV)
T
/dt
I
T(RMS)
(A)
20
16
12
8
4
0
-50
base temperature; maximum values
RMS on-state current as a function of mounting
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
I
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
0
50
100
All information provided in this document is subject to legal disclaimers.
T
003aab777
mb
( C)
Rev. 02 — 1 December 2010
150
Conditions
full sine wave; T
see
full sine wave; T
t
full sine wave; T
t
t
I
over any 20 ms period
p
p
p
T
= 20 ms; see
= 16.7 ms
= 10 ms; sine-wave pulse
= 20 A; I
Figure
G
3; see
= 0.2 A; dI
Fig 2.
Figure
mb
j(init)
j(init)
I
T(RMS)
(A)
Figure
≤ 126 °C;
60
50
40
30
20
10
= 25 °C;
= 25 °C;
0
10
duration; maximum values
RMS on-state current as a function of surge
4; see
G
2
/dt = 0.2 A/µs
1; see
Figure 5
Figure 2
10
1
BTA316-800ET
1
surge duration (s)
Min
-
-
-
-
-
-
-
-
-
-40
-
© NXP B.V. 2010. All rights reserved.
3Q Hi-Com Triac
003aaf674
100
150
Max
800
16
140
150
98
2
5
0.5
150
10
Unit
V
A
A
A
A
A/µs
A
W
W
°C
°C
3 of 14
2
s