BC848CDXV6T1G ON Semiconductor, BC848CDXV6T1G Datasheet

TRANS NPN DUAL 30V 100MA SOT-563

BC848CDXV6T1G

Manufacturer Part Number
BC848CDXV6T1G
Description
TRANS NPN DUAL 30V 100MA SOT-563
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC848CDXV6T1G

Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
420 @ 2mA, 5V
Power - Max
500mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-563
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
BC847CDXV6T1G,
BC847CDXV6T5G,
BC848CDXV6T1G
Dual General Purpose
Transistors
NPN Duals
applications. They are housed in the SOT−563 which is designed for
low power surface mount applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
© Semiconductor Components Industries, LLC, 2011
April, 2011 − Rev. 3
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Total Device Dissipation, (Note 1)
Thermal Resistance,
Total Device Dissipation, (Note 1)
Thermal Resistance,
Junction and Storage
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
These transistors are designed for general purpose amplifier
These are Pb−Free Devices
T
Derate above 25°C
Junction-to-Ambient (Note 1)
T
Derate above 25°C
Junction-to-Ambient (Note 1)
Temperature Range
A
A
= 25°C
= 25°C
(Both Junctions Heated)
(One Junction Heated)
Characteristic
Characteristic
Rating
Symbol
V
V
V
CEO
CBO
EBO
I
C
Symbol
Symbol
T
R
R
J
P
P
, T
qJA
qJA
D
D
stg
BC847
100
6.0
45
50
−55 to +150
Max
Max
357
350
500
250
2.9
4.0
BC848
100
5.0
30
30
1
mW/°C
mW/°C
°C/W
°C/W
mAdc
Unit
Unit
mW
mW
Unit
°C
V
V
V
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
(Note: Microdot may be in either location)
Q
(3)
(4)
1
ORDERING INFORMATION
MARKING DIAGRAMS
1x
M
G
http://onsemi.com
BC847CDXV6T1
= Device Code
= Date Code
= Pb−Free Package
CASE 463A
x = G or M
1
SOT−563
6
(5)
1x M G
Publication Order Number:
(2)
G
1
BC847CDXV6T1/D
(1)
(6)
Q
2

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BC848CDXV6T1G Summary of contents

Page 1

... BC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−563 which is designed for low power surface mount applications. Features • These are Pb−Free Devices MAXIMUM RATINGS Rating Symbol Collector − ...

Page 2

... Vdc 2.0 kW,f = 1.0 kHz 200 Hz ORDERING INFORMATION Device BC847CDXV6T1G BC847CDXV6T5G BC848CDXV6T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) A BC847CDXV6T1 BC848CDXV6T1 BC847CDXV6T1 ...

Page 3

I , COLLECTOR CURRENT (A) C Figure 1. DC Current Gain vs. Collector Current 1 1 0.9 −55°C ...

Page 4

T A 1.6 1 0.8 0.4 0 0.02 0.1 1 BASE CURRENT (mA) B Figure 5. Collector Saturation Region 10 ...

Page 5

... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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