BC847BPDW1T3G ON Semiconductor, BC847BPDW1T3G Datasheet - Page 9

• Manufacturer Part Number: BC847BPDW1T3G
• Description: TRANS NPN/PNP BIPO 45V SOT-363
• Manufacturer: ON Semiconductor

Specifications of BC847BPDW1T3G

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 380mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 50 V
• Continuous Collector Current: 100 mA
• Power Dissipation: 380 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 150
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Details

7.0
5.0
3.0
2.0
1.0
10
0.4 0.6
0.8
1.0
Figure 23. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
2.0
C
ib
TYPICAL NPN CHARACTERISTICS − BC847 SERIES
4.0
C
ob
6.0
8.0
10
T
A
= 25°C
20
http://onsemi.com
40
9
400
300
200
100
80
60
40
30
20
0.5
Figure 24. Current−Gain − Bandwidth Product
0.7 1.0
I
C
, COLLECTOR CURRENT (mAdc)
2.0
3.0
5.0
7.0
10
20
V
T
A
CE
= 25°C
= 10 V
30
50