MRF8S18260HSR6 Freescale Semiconductor, MRF8S18260HSR6 Datasheet

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MRF8S18260HSR6

Manufacturer Part Number
MRF8S18260HSR6
Description
MOSFET RF N-CH 260W NI1230S-8
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF8S18260HSR6

Voltage - Rated
65V
Transistor Type
LDMOS (Dual)
Frequency
1.81GHz
Gain
17.9dB
Current - Test
1.6A
Voltage - Test
30V
Power - Output
74W
Package / Case
SOT-1110B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF8S18260HSR6
Manufacturer:
FREESCALE
Quantity:
100
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 374 Watts CW
• Typical P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Thermal Resistance, Junction to Case
Designed for CDMA and multicarrier base station applications with
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
1600 mA, P
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF.
Output Power (3 dB Input Overdrive from Rated P
and Common Source S--Parameters
Operation
Derate above 25°C
Case Temperature 81°C, 74 W CW, 30 Vdc, I
Case Temperature 88°C, 260 W CW
calculators by product.
Select Documentation/Application Notes -- AN1955.
Frequency
1805 MHz
1840 MHz
1880 MHz
out
out
@ 1 dB Compression Point ≃ 260 Watts CW
Rating
= 74 Watts Avg., IQ Magnitude Clipping, Channel
C
= 25°C
(dB)
17.9
17.9
17.9
G
ps
(1,2)
Characteristic
(4)
, 30 Vdc, I
31.6
31.9
32.5
(%)
η
D
Symbol
DQ
V
V
V
CW
T
T
DSS
T
GS
DD
stg
C
J
= 1600 mA, 1805 MHz
DQ
Output PAR
= 1600 mA, 1805 MHz
(dB)
DD
6.0
6.0
5.9
out
--65 to +150
--0.5, +65
--6.0, +10
= 30 Volts, I
)
32, +0
Value
150
225
420
3.5
ACPR
(dBc)
--35.0
--36.0
--36.0
DQ
W/°C
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
=
Symbol
R
θJC
Document Number: MRF8S18260H
RF
RF
MRF8S18260HR6 MRF8S18260HSR6
1805- -1880 MHz, 74 W AVG., 30 V
MRF8S18260HSR6
MRF8S18260HR6
MRF8S18260HSR6
MRF8S18260HR6
in
in
/V
/V
CASE 375I- -03
N.C.
N.C.
Figure 1. Pin Connections
CASE 375J- -02
GS
GS
NI- -1230- -8
NI- -1230S- -8
LATERAL N- -CHANNEL
RF POWER MOSFETs
SINGLE W- -CDMA
1
2
3
4
Value
(Top View)
0.27
0.26
(2,3)
Rev. 0, 9/2010
8
7
6
5
VBW
RF
RF
VBW
out
out
°C/W
Unit
/V
/V
DS
DS
1

Related parts for MRF8S18260HSR6

MRF8S18260HSR6 Summary of contents

Page 1

... MHz AVG SINGLE W- -CDMA LATERAL N- -CHANNEL RF POWER MOSFETs CASE 375I- -03 NI- -1230- -8 MRF8S18260HR6 CASE 375J- -02 NI- -1230S- -8 MRF8S18260HSR6 1 8 N.C. VBW out out 4 5 VBW N.C. (Top View) Figure 1. Pin Connections (2,3) Symbol Value Unit °C/W R θJC 0.27 0.26 MRF8S18260HR6 MRF8S18260HSR6 ...

Page 2

... W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 1805 MHz 1840 MHz 1880 MHz 1. Gates (Pins 2, 3) and drains (Pins 6, 7) are connected internally. 2. Part internally matched both on input and output. MRF8S18260HR6 MRF8S18260HSR6 2 = 25°C unless otherwise noted) Symbol I DSS I DSS ...

Page 3

... MHz Bandwidth DD DQ P1dB IMD sym VBW res = 74 W Avg ∆G ∆P1dB Min Typ Max Unit — 260 — W MHz — 21 — — 64 — MHz — 0.4 — dB — 0.011 — dB/°C (1) — 0.01 — dB/°C MRF8S18260HR6 MRF8S18260HSR6 3 ...

Page 4

... V Electrolytic Capacitors C24, C25 6.8 μF Chip Capacitors C26, C27 R1 2 kΩ, 1/4 W Chip Resistor 4.75 Ω, 1/4 W Chip Resistors R2, R3 R4, R5, R6 kΩ, 1/4 W Chip Resistors 0.020″, ε PCB MRF8S18260HR6 MRF8S18260HSR6 C20 C22 C26 R2 C18 C3 C5 C16 ...

Page 5

... Input Signal PAR = 7 0.01% Probability on CCDF 110 P , OUTPUT POWER (WATTS) out Figure 5. Output Peak- -to- -Average Ratio Compression (PARC) versus Output Power η --0 --33 --1.2 --34 --5 --1.4 --35 --10 --1.6 --15 --1.8 --36 --37 --20 --2 --38 --25 --2.2 1900 1920 100 -- --25 ACPR 40 --30 --35 30 --40 20 --45 10 --50 0 130 MRF8S18260HR6 MRF8S18260HSR6 5 ...

Page 6

... Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK--TO--AVERAGE (dB) Figure 8. CCDF W- -CDMA IQ Magnitude Clipping, Single- -Carrier Test Signal MRF8S18260HR6 MRF8S18260HSR6 6 TYPICAL CHARACTERISTICS G 1840 MHz 1880 MHz Vdc 1600 mA, Single--Carrier DD DQ 1880 MHz ACPR 1840 MHz ...

Page 7

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Input Device Matching Under Network Test Z Z source load Output Matching Network MRF8S18260HR6 MRF8S18260HSR6 7 ...

Page 8

... ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 30 V MRF8S18260HR6 MRF8S18260HSR6 Vdc 1600 mA, Pulsed CW, 10 μsec(on) 10% Duty Cycle DD DQ Ideal 1805 MHz 1845 MHz 1880 MHz 1845 MHz INPUT POWER (dBm) in P1dB ...

Page 9

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S18260HR6 MRF8S18260HSR6 9 ...

Page 10

... MRF8S18260HR6 MRF8S18260HSR6 10 RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRF8S18260HR6 MRF8S18260HSR6 11 ...

Page 12

... MRF8S18260HR6 MRF8S18260HSR6 12 RF Device Data Freescale Semiconductor ...

Page 13

... For Software Part Number search at http://www.freescale.com, and select the “Part Number” link the Software & Tools tab on the part’s Product Summary page to download the respective tool. The following table summarizes revisions to this document. Revision Date • Initial Release of Data Sheet 0 Sept. 2010 RF Device Data Freescale Semiconductor REVISION HISTORY Description MRF8S18260HR6 MRF8S18260HSR6 13 ...

Page 14

... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF8S18260HR6 MRF8S18260HSR6 Document Number: MRF8S18260H Rev. 0, 9/2010 14 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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