BLF7G27LS-150P,118 NXP Semiconductors, BLF7G27LS-150P,118 Datasheet - Page 5

• Manufacturer Part Number: BLF7G27LS-150P,118
• Description: TRANS LDMOS SOT539B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G27LS-150P,118

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: 2.5GHz ~ 2.7GHz
• Gain: 16.5dB
• Current Rating: 37A
• Current - Test: 1.2A
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: *
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 37A
• Drain Source Voltage (max): 65V
• Output Power (max): 30W(Typ)
• Power Gain (typ)@vds: 16.5@28VdB
• Frequency (min): 2.5GHz
• Frequency (max): 2.7GHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 0.86S
• Drain Source Resistance (max): 140(Typ)@6.05Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 26%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier W-CDMA/IS-95
• Number Of Elements: 2
• Vswr (max): 20
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BLF7G27L-150P_7G27LS-150P
Product data sheet
Fig 3.
Fig 5.
ACPR
(dBc)
PAR
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
885
−10
−20
−30
−40
−50
−60
−70
12
0
8
4
0
0
V
function of load power; typical values
0
V
ratio as a function of load power;
typical values
Single carrier IS-95 ACPR at 885 kHz as a
Single carrier IS-95 peak-to-average power
DS
DS
= 28 V; I
= 28 V; I
20
20
Dq
Dq
= 1200 mA.
= 1200 mA.
40
40
(3)
(2)
(1)
(1)
(2)
(3)
60
60
BLF7G27L-150P; BLF7G27LS-150P
80
80
All information provided in this document is subject to legal disclaimers.
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P
P
L
L
(W)
(W)
Rev. 1 — 12 November 2010
100
100
Fig 4.
Fig 6.
ACPR
(dBc)
P
(W)
L(M)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
1980
−20
−40
−60
−80
250
200
150
100
50
0
0
0
0
V
Single carrier IS-95 ACPR at 1980 kHz as a
function of load power; typical values
V
Single carrier IS-95 peak power as a function
of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
20
20
Dq
Dq
= 1200 mA.
= 1200 mA.
40
40
(3)
(2)
(1)
Power LDMOS transistor
60
60
(1)
(2)
(3)
© NXP B.V. 2010. All rights reserved.
80
80
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P
P
L
L
(W)
(W)
100
100
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