BLF7G27LS-90P,112 NXP Semiconductors, BLF7G27LS-90P,112 Datasheet - Page 2

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BLF7G27LS-90P,112

Manufacturer Part Number
BLF7G27LS-90P,112
Description
TRANS LDMOS SOT1121B
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF7G27LS-90P,112

Voltage - Rated
65V
Transistor Type
LDMOS (Dual)
Frequency
2.5GHz ~ 2.7GHz
Gain
17.5dB
Current Rating
18A
Current - Test
*
Voltage - Test
28V
Power - Output
16W
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF7G27L-90P_BLF7G27LS-90P
Objective data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF7G27L-90P (SOT1121A)
1
2
3
4
5
BLF7G27LS-90P (SOT1121B)
1
2
3
4
5
Type number
BLF7G27L-90P
BLF7G27LS-90P
Symbol
V
V
I
T
T
D
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain1
drain2
gate1
gate2
source
drain1
drain2
gate1
gate2
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
-
BLF7G27L-90P; BLF7G27LS-90P
Rev. 1 — 2 November 2010
flanged LDMOST ceramic package; 2 mounting holes;
4 leads
earless flanged LDMOST ceramic package; 4 leads
Conditions
[1]
[1]
Simplified outline
1
3
1
3
2
4
2
4
Power LDMOS transistor
5
5
Graphic symbol
-
Min
-
−0.5
-
−65
© NXP B.V. 2010. All rights reserved.
3
4
3
4
Max
65
+13
18
+150
225
Version
SOT1121A
SOT1121B
1
2
1
2
sym117
sym117
5
5
Unit
V
V
A
°C
°C
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