AUIRG4PH50S International Rectifier, AUIRG4PH50S Datasheet - Page 2

• Manufacturer Part Number: AUIRG4PH50S
• Description: IGBT 1200V 57A 200W TO247AC
• Manufacturer: International Rectifier

Specifications of AUIRG4PH50S

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 1.7V @ 15V, 33A
• Current - Collector (ic) (max): 57A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (TO-247AC)
• Transistor Type: IGBT
• Dc Collector Current: 57A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 200mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Notes:

‚
ƒ
AUIRG4PH50S
Dynamic Electrical Characteristics @ T
Static or Switching Electrical Characteristics @ T
V
V
∆V
V
V
DV
g
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
fe
E
(BR)CES
(BR)ECS
CE(ON)
GE(th)
on
off
ts
ts
2
oes
ge
ies
res
g
gc
(BR)CES
GE(th)
Repetitive rating; V
max. junction temperature. ( See fig. 13b )
V
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
CC
/DT
= 80%(V
/∆T
J
J
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Gate-to-Emitter Leakage Current
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CES
), V
GE
GE
= 20V, pulse width limited by
= 20V, L = 10µH, R
…
G
= 5.0Ω,
J
„
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
1200
Min. Typ. Max. Units
3.0
18
—
—
—
—
—
27
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
„
…
1170
1000
3600
1.80
19.6
21.4
1.22
1.47
1.75
1.55
167
845 1268
425
160
-11
40
25
55
32
29
32
30
37
13
30
—
—
—
—
—
—
—
J
= 25°C (unless otherwise specified)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
1000
±100
251
638
250
1.7
6.0
2.0
38
83
44
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
mJ
mJ
nC
nH
nA
pF
V
V
S
V
V
V
V
V
V
V
V
V
I
V
V
T
I
V
Energy losses include "tail"
See Fig. 9, 10, 14
T
I
V
Energy losses include "tail"
See Fig. 10,11,14
Measured 5mm from package
V
V
ƒ = 1.0MHz
C
C
C
I
I
I
J
J
GE
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
GE
GE
GE
GE
CC
C
C
C
= 33A
= 33A, V
= 33A, V
= 25°C
= 150°C,
= 33A
= 57A
= 33A , T
= V
= V
= 0V, I
= 0V, I
= 0V, I
= 100V, I
= 0V, V
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
Conditions
Conditions
, I
, I
C
C
C
CE
CE
C
C
CE
CC
CC
= 250µA
= 1.0 A
= 2.0 mA
J
= 250µA
= 250µA
C
= 150°C
G
G
= 1200V
= 1200V, T
= 10V, T
= 960V
= 960V
= 33A
= 5.0Ω
= 5.0Ω
See Fig. 8
See Fig. 7
www.irf.com
J
V
= 25°C
See Fig.2, 5
J
GE
= 150°C
= 15V