IRFI4110GPBF International Rectifier, IRFI4110GPBF Datasheet
IRFI4110GPBF
Specifications of IRFI4110GPBF
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IRFI4110GPBF Summary of contents
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... Repetitive Avalanche Energy E AR Thermal Resistance Symbol R Junction-to-Case θJC R Junction-to-Ambient θJA www.irf.com V DSS R DS(on (Silicon Limited) Parameter @ 10V (Silicon Limited Parameter j i IRFI4110GPbF ® HEXFET Power MOSFET 100V typ. 3.7m Ω max. 4.5mΩ 72A TO-220AB Full-Pak Gate Drain Max 290 61 0.41 ± ...
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Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...
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PULSE WIDTH VGS TOP 15V Tj = 25°C 10V 5.5V 5.0V 4.7V 4.5V 100 4.2V BOTTOM 4.0V 10 4. Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 ...
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175°C 100 25° 1.0 0.0 0.2 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...
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D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 ...
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250µ 1.0mA 2 1.0A 1.5 1.0 -75 -50 - 100 125 150 175 200 Temperature ( °C ) Fig 16. ...
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D.U.T + ƒ ‚ - R • • • SD • Fig 20 D.U 20V V GS 0.01 Ω Fig 21a. Unclamped Inductive Test Circuit ...
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TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information TO-220AB Full-Pak package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 ...