AUIRF3805S-7P International Rectifier, AUIRF3805S-7P Datasheet - Page 8
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AUIRF3805S-7P
Manufacturer Part Number
AUIRF3805S-7P
Description
MOSFET N-CH 55V 160A D2PAK-7
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRF3805L-7P.pdf
(14 pages)
Specifications of AUIRF3805S-7P
Input Capacitance (ciss) @ Vds
7820pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.6 mOhm @ 140A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
TO-263-7, D²Pak (6 leads + Tab), TO-263CB
Configuration
Single Quint Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.6 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
240 A
Power Dissipation
300 W
Mounting Style
SMD/SMT
Gate Charge Qg
130 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AUIRF3805S-7P
Manufacturer:
IR
Quantity:
12 500
1000
8
100
10
500
400
300
200
100
1.0E-06
1
0
Fig 16. Maximum Avalanche Energy
25
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tstart = 150°C.
Starting T J , Junction Temperature (°C)
50
Duty Cycle = Single Pulse
vs. Temperature
TOP
BOTTOM 1% Duty Cycle
I D = 140A
75
1.0E-05
100
Fig 15. Typical Avalanche Current vs.Pulsewidth
Single Pulse
0.01
125
j = 25°C and
0.05
0.10
150
1.0E-04
175
tav (sec)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. T
Purely a thermal phenomenon and failure occurs at a
not exceeded.
Figures 12a, 12b.
T
t
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
avalanche pulse.
voltage increase during avalanche).
av
av =
thJC
D (ave)
jmax
= Allowable avalanche current.
=
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tstart =25°C (Single Pulse)
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
1.0E-03
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
= P
D (ave)
1.0E-02
jmax
av
Tj = 150°C and
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
www.irf.com
thJC
jmax
1.0E-01
is