AUIRF3805L-7P International Rectifier, AUIRF3805L-7P Datasheet - Page 4

• Manufacturer Part Number: AUIRF3805L-7P
• Description: MOSFET N-CH 55V 160A TO262-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF3805L-7P

• Input Capacitance (ciss) @ Vds: 7820pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.6 mOhm @ 140A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-262-7
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 240A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.002ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 300W
• Operating: RoHS Compliant
• Configuration: Single Quint Source
• Resistance Drain-source Rds (on): 2.6 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 240 A
• Power Dissipation: 300 W
• Mounting Style: Through Hole
• Gate Charge Qg: 130 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
1000
4
100
100
0.1
1.0
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
0.1
2
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
4.5V
1
4
T J = 25°C
V DS = 25V
Tj = 25°C
10
6
60µs PULSE WIDTH
60µs PULSE WIDTH
TOP
BOTTOM
100
8
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
10
Fig 4. Typical Forward Transconductance
10000
1000
100
250
200
150
100
Fig 2. Typical Output Characteristics
10
50
1
0
0.1
0
vs. Drain Current
V DS , Drain-to-Source Voltage (V)
20
I D ,Drain-to-Source Current (A)
1
4.5V
40
Tj = 175°C
60µs PULSE WIDTH
10
60
V DS = 10V
380µs PULSE WIDTH
T J = 25°C
T J = 175°C
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80
TOP
BOTTOM
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
120