AUIRF3805S International Rectifier, AUIRF3805S Datasheet - Page 5

• Manufacturer Part Number: AUIRF3805S
• Description: MOSFET N-CH 55V 160A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF3805S

• Input Capacitance (ciss) @ Vds: 7960pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 290nC @ 10V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.3 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 210 A
• Power Dissipation: 300 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 190 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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14000
12000
10000
1000.0
8000
6000
4000
2000
100.0
10.0
1.0
0.1
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
0.4
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
0.8
T J = 25°C
Coss
Crss
Ciss
1.2
f = 1 MHZ
10
1.6
V GS = 0V
2.0
2.4
100
10000
1000
100
0.1
10
Fig 8. Maximum Safe Operating Area
20
16
12
1
8
4
0
Fig 6. Typical Gate Charge Vs.
1
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 75A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
10msec
50
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
100
100µsec
1msec
V DS = 44V
VDS= 28V
150
100
200
250
1000
5
300