AUIRF3805L International Rectifier, AUIRF3805L Datasheet - Page 2
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AUIRF3805L
Manufacturer Part Number
AUIRF3805L
Description
MOSFET N-CH 55V 160A TO262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRF3805STRL.pdf
(15 pages)
Specifications of AUIRF3805L
Input Capacitance (ciss) @ Vds
7960pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.3 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
290nC @ 10V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.3 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
210 A
Power Dissipation
300 W
Mounting Style
Through Hole
Gate Charge Qg
190 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AUIRF3805L-7P
Manufacturer:
IR
Quantity:
12 500
Static Electrical Characteristics @ T
V
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
t
Note
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
V
D
S
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
oss
g
gs
gd
rr
2
(BR)DSS
eff.
through ,,
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
are on page 3
Parameter
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
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2.0
55
75
0.051
7960
1260
4400
1550
–––
–––
–––
–––
–––
–––
–––
190
150
630
980
–––
–––
–––
2.6
4.5
7.5
52
72
20
93
87
36
47
210
-200
–––
–––
–––
250
200
290
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
890
3.3
4.0
1.3
20
54
71
V/°C
m
µA
nA
nC
nH
nC
ns
pF
ns
V
V
V
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 75A **
= 75A**
= 25°C, I
= 25°C, I
= 2.6
= V
= 25V, I
= 55V, V
= 55V, V
= 44V
= 28V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
f
f
Conditions
Conditions
D
DS
S
F
D
D
DS
DS
= 250µA
GS
GS
= 250µA
= 75A** , V
= 75A **
= 75A** , V
= 75A
= 0V to 44V
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
= 0V
= 0V, T
f
www.irf.com
f
D
= 1mA
**
J
= 125°C
DD
GS
G
g
= 28V
= 0V
S
D
f