AUIRF1324S-7P International Rectifier, AUIRF1324S-7P Datasheet - Page 4

• Manufacturer Part Number: AUIRF1324S-7P
• Description: MOSFET N-CH 24V 429A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF1324S-7P

• Input Capacitance (ciss) @ Vds: 7700pF @ 19V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 mOhm @ 160A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 240A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 252nC @ 10V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: TO-263-7, D²Pak (6 leads + Tab)
• Configuration: Single Quint Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 mOhms
• Drain-source Breakdown Voltage: 24 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 429 A
• Power Dissipation: 300 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 180 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
100000
10000
1000
1000
1000
100
100
0.1
10
10
1
0.1
Fig 3. Typical Transfer Characteristics
2
1
Fig 1. Typical Output Characteristics
T J = 175°C
C oss
C rss
C iss
V DS , Drain-to-Source Voltage (V)
3
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
4
1
4.5V
T J = 25°C
5
f = 1 MHZ
10
V DS = 15V
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 25°C
6
10
TOP
BOTTOM
7
8
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
100
9
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
12.0
10.0
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
8.0
6.0
4.0
2.0
0.0
10
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
0
Fig 2. Typical Output Characteristics
I D = 160A
V GS = 10V
I D = 75A
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G , Total Gate Charge (nC)
50
1
4.5V
V DS = 19V
V DS = 12V
100
≤60µs PULSE WIDTH
Tj = 175°C
10
TOP
BOTTOM
150
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VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
200