AUIRF1324S-7P International Rectifier, AUIRF1324S-7P Datasheet - Page 4
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AUIRF1324S-7P
Manufacturer Part Number
AUIRF1324S-7P
Description
MOSFET N-CH 24V 429A D2PAK-7
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRF1324S-7P.pdf
(12 pages)
Specifications of AUIRF1324S-7P
Input Capacitance (ciss) @ Vds
7700pF @ 19V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 mOhm @ 160A, 10V
Drain To Source Voltage (vdss)
24V
Current - Continuous Drain (id) @ 25° C
240A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
252nC @ 10V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
TO-263-7, D²Pak (6 leads + Tab)
Configuration
Single Quint Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1 mOhms
Drain-source Breakdown Voltage
24 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
429 A
Power Dissipation
300 W
Mounting Style
SMD/SMT
Gate Charge Qg
180 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AUIRF1324S-7P
Manufacturer:
IR
Quantity:
12 500
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
100000
10000
1000
1000
1000
100
100
0.1
10
10
1
0.1
Fig 3. Typical Transfer Characteristics
2
1
Fig 1. Typical Output Characteristics
T J = 175°C
C oss
C rss
C iss
V DS , Drain-to-Source Voltage (V)
3
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
4
1
4.5V
T J = 25°C
5
f = 1 MHZ
10
V DS = 15V
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 25°C
6
10
TOP
BOTTOM
7
8
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
100
9
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
12.0
10.0
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
8.0
6.0
4.0
2.0
0.0
10
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
0
Fig 2. Typical Output Characteristics
I D = 160A
V GS = 10V
I D = 75A
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G , Total Gate Charge (nC)
50
1
4.5V
V DS = 19V
V DS = 12V
100
≤60µs PULSE WIDTH
Tj = 175°C
10
TOP
BOTTOM
150
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VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
200