AUIRF2907ZS7PTL International Rectifier, AUIRF2907ZS7PTL Datasheet - Page 7

• Manufacturer Part Number: AUIRF2907ZS7PTL
• Description: MOSFET N-CH 75V 180A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF2907ZS7PTL

• Input Capacitance (ciss) @ Vds: 7580pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 110A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: TO-263-7, D²Pak (6 leads + Tab), TO-263CB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 13b. Gate Charge Test Circuit
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
I
AS
12V
V
V
GS
G
R G
Same Type as D.U.T.
20V
V
V DS
GS
Current Regulator
.2 F
Q
t p
GS
t p
50K
3mA
Current Sampling Resistors
I AS
.3 F
D.U.T
I
0.01
L
G
V
Q
Charge
Q
(BR)DSS
GD
G
D.U.T.
I
D
15V
+
-
V
DS
DRIVER
+
-
V DD
A
700
600
500
400
300
200
100
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
Fig 14. Threshold Voltage vs. Temperature
-75 -50 -25 0
25
Starting T J , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
I D = 250µA
I D = 1.0mA
I D = 1.0A
50
T J , Temperature ( °C )
75
25 50 75 100 125 150 175 200
vs. Drain Current
100
TOP
BOTTOM 110A
125
150
I D
24A
34A
175
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