AUIRF2804STRL International Rectifier, AUIRF2804STRL Datasheet - Page 6

• Manufacturer Part Number: AUIRF2804STRL
• Description: MOSFET N-CH 40V 195A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF2804STRL

• Input Capacitance (ciss) @ Vds: 6450pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 195A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.0001
6
300
250
200
150
100
0.001
50
0.01
0
0.1
1E-008
1
Fig 9. Maximum Drain Current vs.
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
Case Temperature
0.01
0.02
T C , Case Temperature (°C)
0.20
0.05
0.10
1E-007
75
Limited By Package
100
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
125
150
t 1 , Rectangular Pulse Duration (sec)
1E-005
175
0.0001
2.0
1.5
1.0
0.5
Fig 10. Normalized On-Resistance
-60 -40 -20 0
I D = 75A
V GS = 10V
0.001
T J , Junction Temperature (°C)
vs. Temperature
20 40 60 80 100 120 140 160 180
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
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0.1
1