AUIRF7737L2TR International Rectifier, AUIRF7737L2TR Datasheet - Page 9

• Manufacturer Part Number: AUIRF7737L2TR
• Description: MOSFET N-CH 40V 315A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF7737L2TR

• Input Capacitance (ciss) @ Vds: 5469pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.9 mOhm @ 94A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 315A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 134nC @ 10V
• Power - Max: 3.3W
• Mounting Type: *
• Package / Case: *
• Configuration: Single Hex Drain Hex Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.9 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 31 A
• Power Dissipation: 3.3 W
• Gate Charge Qg: 89 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Please see AN-1035 for DirectFET® assembly details and stencil and substrate design recommendations
Automotive DirectFET
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
®
®
Part Marking
"AU" = GATE AND
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
AUTOMOTIVE MARKING
the date code indicates "Lead-Free"
CODE
L1
L2
M
A
B
C
D
E
G
H
K
P
R
F
J
L
9.05
6.85
5.90
0.55
0.58
1.18
0.98
0.73
0.38
1.35
2.55
3.95
5.35
0.68
0.09
0.02
MIN
METRIC
DIMENSIONS
MAX
9.15
7.10
6.00
0.65
0.62
1.22
1.02
0.77
0.42
1.45
2.65
4.05
5.45
0.74
0.17
0.08
0.356
0.270
0.232
0.022
0.023
0.046
0.039
0.029
0.015
0.053
0.100
0.155
0.210
0.027
0.003
0.001
MIN
IMPERIAL
0.360
0.280
0.236
0.026
0.024
0.048
0.040
0.030
0.017
0.057
0.104
0.159
0.214
0.029
0.007
0.003
MAX
9